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FU4104-VB Product details
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Product Introduction
FU4104-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. Manufactured using advanced Trench technology, this MOSFET has extremely low on-resistance and excellent current handling capability, suitable for electronic devices that require efficient switching operation and powerful current management. It is designed to improve power conversion efficiency and system stability, and is widely used in various high-performance power management and switching modules.
FU4104-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. Manufactured using advanced Trench technology, this MOSFET has extremely low on-resistance and excellent current handling capability, suitable for electronic devices that require efficient switching operation and powerful current management. It is designed to improve power conversion efficiency and system stability, and is widely used in various high-performance power management and switching modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FU4104-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: FU4104-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and modules
FU4104-VB MOSFET is ideal for low voltage and high current power management and switching applications. Due to its low on-resistance and high current handling capability, this MOSFET performs well in high-efficiency power converters, DC-DC conversion modules, and high current load switching circuits. It is particularly suitable for electric vehicle power management systems, capable of handling high current demands while maintaining low power consumption. In addition, this MOSFET can also be widely used in motor drive systems, high-performance computer power supplies, and various high-power electronic devices, providing stable and reliable current control and efficient switching operations for complex circuits.
FU4104-VB MOSFET is ideal for low voltage and high current power management and switching applications. Due to its low on-resistance and high current handling capability, this MOSFET performs well in high-efficiency power converters, DC-DC conversion modules, and high current load switching circuits. It is particularly suitable for electric vehicle power management systems, capable of handling high current demands while maintaining low power consumption. In addition, this MOSFET can also be widely used in motor drive systems, high-performance computer power supplies, and various high-power electronic devices, providing stable and reliable current control and efficient switching operations for complex circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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