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FU3518-VB Product details
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Product Introduction: FU3518-VB
FU3518-VB is a single-channel N-type MOSFET in TO251 package, designed for applications requiring efficient current management and high power handling. Its drain-source voltage is 80V and drain current is 75A, suitable for medium and high voltage and high current scenarios. The threshold voltage of this MOSFET is 3V, and it has a low on-resistance of 8.7mΩ and 6.4mΩ at a gate-source voltage of 4.5V and 10V, respectively, which significantly reduces conduction losses. Using Trench technology, this MOSFET provides excellent switching performance and high efficiency, and is particularly suitable for electronic systems that require high power density and reliable performance.
FU3518-VB is a single-channel N-type MOSFET in TO251 package, designed for applications requiring efficient current management and high power handling. Its drain-source voltage is 80V and drain current is 75A, suitable for medium and high voltage and high current scenarios. The threshold voltage of this MOSFET is 3V, and it has a low on-resistance of 8.7mΩ and 6.4mΩ at a gate-source voltage of 4.5V and 10V, respectively, which significantly reduces conduction losses. Using Trench technology, this MOSFET provides excellent switching performance and high efficiency, and is particularly suitable for electronic systems that require high power density and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package is small in size and has good heat dissipation performance, suitable for compact circuit design.
2. **Configuration**: Single channel N-type
- Single channel design, suitable for simple and efficient circuit control.
3. **Drain-source voltage (VDS)**: 80V
- The maximum drain-source voltage of this MOSFET is 80V, suitable for medium voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring a wide range of control voltage applicability and stability.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage of 3V ensures that the MOSFET can be effectively turned on at moderate drive voltages.
6. **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- Low on-resistance reduces power consumption and heat generation, improving system efficiency.
7. **Drain current (ID)**: 75A
- With a maximum drain current of 75A, it can handle high current loads and is suitable for power-intensive applications.
8. **Technology**: Trench
- Trench technology brings lower on-resistance and faster switching speed, improving overall performance and reliability.
1. **Package**: TO251
- The TO251 package is small in size and has good heat dissipation performance, suitable for compact circuit design.
2. **Configuration**: Single channel N-type
- Single channel design, suitable for simple and efficient circuit control.
3. **Drain-source voltage (VDS)**: 80V
- The maximum drain-source voltage of this MOSFET is 80V, suitable for medium voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring a wide range of control voltage applicability and stability.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage of 3V ensures that the MOSFET can be effectively turned on at moderate drive voltages.
6. **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- Low on-resistance reduces power consumption and heat generation, improving system efficiency.
7. **Drain current (ID)**: 75A
- With a maximum drain current of 75A, it can handle high current loads and is suitable for power-intensive applications.
8. **Technology**: Trench
- Trench technology brings lower on-resistance and faster switching speed, improving overall performance and reliability.
Domain and module applications：
Applicable fields and modules
1. **Power management**: FU3518-VB is ideal for efficient power management systems such as DC-DC converters and switching power supplies (SMPS). In these applications, MOSFETs can provide efficient power conversion through low on-resistance, reduce heat loss, and ensure the stability and high efficiency of the power module.
2. **Motor control**: Due to its high current capability and low on-resistance, FU3518-VB is suitable for motor drive circuits, especially motor control systems in power tools, industrial automation and electric vehicles. It can provide stable current control for motors to ensure efficient operation.
3. **Load switching**: This MOSFET is suitable for various load switching applications, such as switch control in high current circuits. Its low on-resistance and high current handling capability enable it to maintain efficient and stable switching performance under various load conditions, suitable for industrial control and power systems.
4. **Inverter**: In inverter applications, especially those involving medium and high voltages, such as solar inverters and UPS systems, the FU3518-VB can provide efficient power conversion and stable operation. Its high current handling capability ensures the reliability and efficiency of the inverter system.
5. **Power Amplifier**: The FU3518-VB can also play an important role in power amplifier circuits, especially in high-power RF amplifiers and audio amplifiers. The high current handling capability and low on-resistance of the MOSFET can improve the power efficiency and performance of the amplifier.
Due to its excellent current handling capability and efficient voltage control, the FU3518-VB is widely used in power management, motor control, and power amplification, ensuring efficient and stable operation of the circuit.
1. **Power management**: FU3518-VB is ideal for efficient power management systems such as DC-DC converters and switching power supplies (SMPS). In these applications, MOSFETs can provide efficient power conversion through low on-resistance, reduce heat loss, and ensure the stability and high efficiency of the power module.
2. **Motor control**: Due to its high current capability and low on-resistance, FU3518-VB is suitable for motor drive circuits, especially motor control systems in power tools, industrial automation and electric vehicles. It can provide stable current control for motors to ensure efficient operation.
3. **Load switching**: This MOSFET is suitable for various load switching applications, such as switch control in high current circuits. Its low on-resistance and high current handling capability enable it to maintain efficient and stable switching performance under various load conditions, suitable for industrial control and power systems.
4. **Inverter**: In inverter applications, especially those involving medium and high voltages, such as solar inverters and UPS systems, the FU3518-VB can provide efficient power conversion and stable operation. Its high current handling capability ensures the reliability and efficiency of the inverter system.
5. **Power Amplifier**: The FU3518-VB can also play an important role in power amplifier circuits, especially in high-power RF amplifiers and audio amplifiers. The high current handling capability and low on-resistance of the MOSFET can improve the power efficiency and performance of the amplifier.
Due to its excellent current handling capability and efficient voltage control, the FU3518-VB is widely used in power management, motor control, and power amplification, ensuring efficient and stable operation of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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