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FU3504-VB Product details
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Product Introduction
FU3504-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. This MOSFET is manufactured using Trench technology and has extremely low on-resistance and high current handling capability, making it suitable for applications that require efficient switching and current management. Its design optimizes the efficiency of current flow and switching performance, and is suitable for the needs of a variety of electronic circuits.
FU3504-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. This MOSFET is manufactured using Trench technology and has extremely low on-resistance and high current handling capability, making it suitable for applications that require efficient switching and current management. Its design optimizes the efficiency of current flow and switching performance, and is suitable for the needs of a variety of electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FU3504-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: FU3504-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and modules
FU3504-VB MOSFET is suitable for power management and switching applications requiring low voltage and high current. Due to its low on-resistance and high current handling capability, it is ideal for use in high-efficiency power converters, DC-DC conversion modules, and high-current load switching circuits. This MOSFET is also widely used in power management of electric vehicles, motor drive systems, and various high-power electronic devices, providing stable current control and efficient switching performance. In addition, it also provides excellent current management and high-efficiency operation in power amplifiers and high-performance computer power systems.
FU3504-VB MOSFET is suitable for power management and switching applications requiring low voltage and high current. Due to its low on-resistance and high current handling capability, it is ideal for use in high-efficiency power converters, DC-DC conversion modules, and high-current load switching circuits. This MOSFET is also widely used in power management of electric vehicles, motor drive systems, and various high-power electronic devices, providing stable current control and efficient switching performance. In addition, it also provides excellent current management and high-efficiency operation in power amplifiers and high-performance computer power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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