中文
English
FU3412-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**FU3412-VB** is a high-performance N-Channel MOSFET in TO251 package, designed for high current and medium voltage applications. With a drain-source voltage withstand capability of 100V and a drain current capability of 65A, this MOSFET is ideal for applications requiring high current and high efficiency. Using Trench technology, FU3412-VB provides extremely low on-resistance, ensuring excellent switching performance and power efficiency.
**FU3412-VB** is a high-performance N-Channel MOSFET in TO251 package, designed for high current and medium voltage applications. With a drain-source voltage withstand capability of 100V and a drain current capability of 65A, this MOSFET is ideal for applications requiring high current and high efficiency. Using Trench technology, FU3412-VB provides extremely low on-resistance, ensuring excellent switching performance and power efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS = 10V
- **Drain current (ID)**: 65A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS = 10V
- **Drain current (ID)**: 65A
- **Technology**: Trench
Domain and module applications：
Application Fields and Modules
1. **High Power Power Management**:
FU3412-VB is suitable for high power power management systems such as DC-DC converters and power switches. Its high current capability and low on-resistance enable it to provide stable and efficient power conversion under high load conditions, ensuring system stability and energy efficiency.
2. **Electric Vehicles (EV) and Hybrid Vehicles**:
In EVs and HEVs, FU3412-VB can be used in battery management systems and electric drive systems. Its high current capability and low on-resistance ensure high efficiency and reliability in battery charging and discharging and motor control.
3. **Power Switches and Protection Circuits**:
This MOSFET is also suitable for power switches and protection circuits. In these applications, FU3412-VB is able to handle high currents and provide reliable switching functions to protect the power system from overload and short circuit.
4. **Inverter System**:
FU3412-VB is suitable for inverter systems such as solar inverters and other high voltage power conversion systems. It can withstand high voltage and high current and provide low on-resistance to ensure efficient power conversion and stable system operation.
With its high current capability and low on-resistance, FU3412-VB is suitable for a variety of high power and high efficiency application scenarios, ensuring the stability and efficiency of the system under complex and high load conditions.
1. **High Power Power Management**:
FU3412-VB is suitable for high power power management systems such as DC-DC converters and power switches. Its high current capability and low on-resistance enable it to provide stable and efficient power conversion under high load conditions, ensuring system stability and energy efficiency.
2. **Electric Vehicles (EV) and Hybrid Vehicles**:
In EVs and HEVs, FU3412-VB can be used in battery management systems and electric drive systems. Its high current capability and low on-resistance ensure high efficiency and reliability in battery charging and discharging and motor control.
3. **Power Switches and Protection Circuits**:
This MOSFET is also suitable for power switches and protection circuits. In these applications, FU3412-VB is able to handle high currents and provide reliable switching functions to protect the power system from overload and short circuit.
4. **Inverter System**:
FU3412-VB is suitable for inverter systems such as solar inverters and other high voltage power conversion systems. It can withstand high voltage and high current and provide low on-resistance to ensure efficient power conversion and stable system operation.
With its high current capability and low on-resistance, FU3412-VB is suitable for a variety of high power and high efficiency application scenarios, ensuring the stability and efficiency of the system under complex and high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
