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FU24N15D-VB Product details
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Product Introduction: FU24N15D-VB
FU24N15D-VB is a single-channel N-type MOSFET in TO251 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 200V, this MOSFET can handle higher voltages while supporting a maximum drain current of 25A. Its threshold voltage is 3V, ensuring that the MOSFET can switch effectively at moderate drive voltages. The on-resistance (RDS(ON)) is 56mΩ (at VGS=10V), allowing the device to exhibit lower power consumption and heat loss in high current applications. Using Trench technology, this MOSFET provides stable switching performance and high efficiency, suitable for a variety of circuit designs requiring high voltage and high current.
FU24N15D-VB is a single-channel N-type MOSFET in TO251 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 200V, this MOSFET can handle higher voltages while supporting a maximum drain current of 25A. Its threshold voltage is 3V, ensuring that the MOSFET can switch effectively at moderate drive voltages. The on-resistance (RDS(ON)) is 56mΩ (at VGS=10V), allowing the device to exhibit lower power consumption and heat loss in high current applications. Using Trench technology, this MOSFET provides stable switching performance and high efficiency, suitable for a variety of circuit designs requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package has good heat dissipation capabilities and compact size, suitable for applications requiring high power density.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET design for efficient switching and amplification applications.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage is 200V, suitable for high voltage circuits and can handle large voltage changes.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, ensuring reliable turn-on at lower gate voltages.
6. **On-resistance (RDS(ON))**:
- 56mΩ @ VGS=10V
- Lower on-resistance helps reduce switching losses and heat generation, improving system efficiency.
7. **Drain current (ID)**: 25A
- Maximum drain current is 25A, suitable for high current applications such as power management and motor control.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and fast switching performance, improving the overall efficiency and reliability of the MOSFET.
1. **Package**: TO251
- The TO251 package has good heat dissipation capabilities and compact size, suitable for applications requiring high power density.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET design for efficient switching and amplification applications.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage is 200V, suitable for high voltage circuits and can handle large voltage changes.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, ensuring reliable turn-on at lower gate voltages.
6. **On-resistance (RDS(ON))**:
- 56mΩ @ VGS=10V
- Lower on-resistance helps reduce switching losses and heat generation, improving system efficiency.
7. **Drain current (ID)**: 25A
- Maximum drain current is 25A, suitable for high current applications such as power management and motor control.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and fast switching performance, improving the overall efficiency and reliability of the MOSFET.
Domain and module applications：
Applications and modules
1. **Power management**: The FU24N15D-VB is ideal for high voltage, high current power management systems such as DC-DC converters and switch mode power supplies (SMPS). In these applications, the MOSFET is able to handle high voltage and high current, providing efficient energy conversion and reducing heat loss.
2. **Motor control**: Due to its high current handling capability and low on-resistance, the FU24N15D-VB is suitable for motor drive circuits, especially in motor control systems for industrial automation, power tools and electric vehicles. This MOSFET is able to provide stable current control and efficient motor drive.
3. **Power amplifier**: In power amplifier circuits, the FU24N15D-VB can be used as an efficient switching element or power regulator. Its high current and high voltage handling capabilities make it suitable for applications such as high power amplifiers and RF amplifiers.
4. **Inverter**: The FU24N15D-VB excels in inverter circuits, especially for high voltage inverters that require high performance and high current handling, such as solar inverters and uninterruptible power supplies (UPS). The high voltage and high current characteristics of this MOSFET ensure efficient conversion and stable operation of the inverter.
5. **High Power Switch**: The FU24N15D-VB is suitable for high power switching applications, such as industrial switching power supplies and high voltage load control circuits. Its high current handling capability and low on-resistance enable it to effectively control high power loads while maintaining low power consumption and high efficiency.
Due to its excellent high voltage and high current handling capabilities, this MOSFET provides stable performance and efficient current management in a variety of applications that require efficient current and voltage control.
1. **Power management**: The FU24N15D-VB is ideal for high voltage, high current power management systems such as DC-DC converters and switch mode power supplies (SMPS). In these applications, the MOSFET is able to handle high voltage and high current, providing efficient energy conversion and reducing heat loss.
2. **Motor control**: Due to its high current handling capability and low on-resistance, the FU24N15D-VB is suitable for motor drive circuits, especially in motor control systems for industrial automation, power tools and electric vehicles. This MOSFET is able to provide stable current control and efficient motor drive.
3. **Power amplifier**: In power amplifier circuits, the FU24N15D-VB can be used as an efficient switching element or power regulator. Its high current and high voltage handling capabilities make it suitable for applications such as high power amplifiers and RF amplifiers.
4. **Inverter**: The FU24N15D-VB excels in inverter circuits, especially for high voltage inverters that require high performance and high current handling, such as solar inverters and uninterruptible power supplies (UPS). The high voltage and high current characteristics of this MOSFET ensure efficient conversion and stable operation of the inverter.
5. **High Power Switch**: The FU24N15D-VB is suitable for high power switching applications, such as industrial switching power supplies and high voltage load control circuits. Its high current handling capability and low on-resistance enable it to effectively control high power loads while maintaining low power consumption and high efficiency.
Due to its excellent high voltage and high current handling capabilities, this MOSFET provides stable performance and efficient current management in a variety of applications that require efficient current and voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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