FU224BTU-VB Product details
Product introduction:
FU224BTU-VB is a high voltage N-Channel MOSFET in TO251 package, suitable for applications requiring high voltage resistance and low to medium current handling capabilities. Based on Trench technology, this MOSFET is capable of operating at a high drain-source voltage of 250V, making it suitable for high voltage switching and power management applications. Its high on-resistance (1100mΩ @ VGS=10V) and relatively low drain current rating (3.8A) make it particularly suitable for applications requiring high voltage isolation and low current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 3.8A
- **Technology type**: Trench technology
Domain and module applications:
1. **High-voltage power switch**: The FU224BTU-VB is suitable for high-voltage power switch applications. In these systems, the MOSFET needs to withstand high voltages and provide sufficient isolation to ensure the safety of the circuit. The device's high voltage withstand capability and moderate current handling capability make it competent for such tasks.
2. **Relay replacement circuit**: Due to its high voltage withstand and moderate current handling capability, the FU224BTU-VB can be used as a replacement for electronic relays, especially in applications that require high-voltage isolation and control. In such circuits, the MOSFET is able to operate efficiently at lower currents.
3. **Power protection circuit**: This MOSFET can be used in power protection circuits, especially as an overvoltage protection element in high-voltage circuits. Although its high on-resistance limits its use in high-current applications, it performs well in scenarios that require current limiting and voltage control.
4. **Low-power lighting driver**: FU224BTU-VB can be used in low-power, high-voltage LED lighting systems as a switching element to provide stable current control. Despite its high on-resistance, it can still provide sufficient control capability and stability in applications with low power requirements.
5. **Charger and adapter circuits**: In a charger or power adapter, this MOSFET can be used for high-voltage input control and protection. Its high withstand voltage characteristics enable it to handle high-voltage inputs, while its relatively low current handling capability makes it suitable for smaller power converters.
With its high withstand voltage and Trench technology, the FU224BTU-VB MOSFET is suitable for a variety of application scenarios that require high-voltage isolation and low-current control, providing a reliable solution for high-voltage switching and protection circuits.
Technical support:
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