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FU214-VB Product details
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Product Introduction: FU214-VB
FU214-VB is a single-channel N-type MOSFET in TO251 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 250V, this MOSFET can handle higher voltages while supporting a maximum drain current of 3.8A. Its threshold voltage is 3V, ensuring that the MOSFET can switch effectively under moderate driving voltage. The on-resistance (RDS(ON)) is 1100mΩ (at VGS=10V), which is suitable for applications with high power consumption requirements. Using Trench technology, this MOSFET provides stable switching performance and reliability, and is suitable for various application scenarios that require high voltage tolerance.
FU214-VB is a single-channel N-type MOSFET in TO251 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 250V, this MOSFET can handle higher voltages while supporting a maximum drain current of 3.8A. Its threshold voltage is 3V, ensuring that the MOSFET can switch effectively under moderate driving voltage. The on-resistance (RDS(ON)) is 1100mΩ (at VGS=10V), which is suitable for applications with high power consumption requirements. Using Trench technology, this MOSFET provides stable switching performance and reliability, and is suitable for various application scenarios that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package provides good heat dissipation and mechanical strength, suitable for reliability requirements in medium power applications.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET is designed for a wide range of switching and amplification applications.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for circuits that need to handle high voltages.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, which allows the MOSFET to be effectively turned on at a moderate control voltage, suitable for a common drive voltage range.
6. **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- The relatively high on-resistance is suitable for applications that require medium power consumption.
7. **Drain current (ID)**: 3.8A
- The maximum drain current is 3.8A, which is suitable for applications that handle medium current.
8. **Technology**: Trench
- The use of Trench technology provides better switching performance and stable electrical characteristics.
1. **Package**: TO251
- The TO251 package provides good heat dissipation and mechanical strength, suitable for reliability requirements in medium power applications.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET is designed for a wide range of switching and amplification applications.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for circuits that need to handle high voltages.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, which allows the MOSFET to be effectively turned on at a moderate control voltage, suitable for a common drive voltage range.
6. **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- The relatively high on-resistance is suitable for applications that require medium power consumption.
7. **Drain current (ID)**: 3.8A
- The maximum drain current is 3.8A, which is suitable for applications that handle medium current.
8. **Technology**: Trench
- The use of Trench technology provides better switching performance and stable electrical characteristics.
Domain and module applications：
Applicable fields and modules
1. **Power management**: FU214-VB is suitable for power management systems that require high voltage, such as high voltage DC-DC converters and power adapters. In these applications, this MOSFET is able to stably handle high voltages, providing reliable power conversion and management functions.
2. **Motor drive**: In motor drive circuits, FU214-VB is suitable for motor control systems that need to handle medium currents and high voltages, such as industrial motor drives and power tools. Its high voltage withstand capability and moderate current handling capability make it suitable for these applications.
3. **Power switch**: Due to its high voltage withstand capability and medium current handling capability, FU214-VB can be used as a high voltage power switch. It is suitable for various power switching applications, including switching control of high voltage loads.
4. **Inverter**: In high voltage inverter circuits, such as solar inverters, this MOSFET is able to effectively handle high voltages and medium currents as a switching element, ensuring efficient operation of the inverter.
5. **High Voltage Protection Circuit**: FU214-VB can be used in high voltage protection circuits to help protect other circuit components from high voltage surges. Its high drain-source voltage capability makes it suitable for high voltage protection and overvoltage protection applications.
The high voltage handling capability and reliability of this MOSFET make it suitable for a variety of applications requiring high voltage and medium current, providing stable performance and effective current control.
1. **Power management**: FU214-VB is suitable for power management systems that require high voltage, such as high voltage DC-DC converters and power adapters. In these applications, this MOSFET is able to stably handle high voltages, providing reliable power conversion and management functions.
2. **Motor drive**: In motor drive circuits, FU214-VB is suitable for motor control systems that need to handle medium currents and high voltages, such as industrial motor drives and power tools. Its high voltage withstand capability and moderate current handling capability make it suitable for these applications.
3. **Power switch**: Due to its high voltage withstand capability and medium current handling capability, FU214-VB can be used as a high voltage power switch. It is suitable for various power switching applications, including switching control of high voltage loads.
4. **Inverter**: In high voltage inverter circuits, such as solar inverters, this MOSFET is able to effectively handle high voltages and medium currents as a switching element, ensuring efficient operation of the inverter.
5. **High Voltage Protection Circuit**: FU214-VB can be used in high voltage protection circuits to help protect other circuit components from high voltage surges. Its high drain-source voltage capability makes it suitable for high voltage protection and overvoltage protection applications.
The high voltage handling capability and reliability of this MOSFET make it suitable for a variety of applications requiring high voltage and medium current, providing stable performance and effective current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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