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FU214A-VB Product details
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Product Introduction
FU214A-VB is a high-performance N-Channel MOSFET in TO251 package, designed for medium-to-high voltage and medium current applications. Manufactured using Trench technology, this MOSFET has excellent on-resistance and electrical performance, suitable for a variety of power management and switching applications. It is designed to provide stable and reliable switching performance under high voltage conditions, suitable for multiple application scenarios in power systems.
FU214A-VB is a high-performance N-Channel MOSFET in TO251 package, designed for medium-to-high voltage and medium current applications. Manufactured using Trench technology, this MOSFET has excellent on-resistance and electrical performance, suitable for a variety of power management and switching applications. It is designed to provide stable and reliable switching performance under high voltage conditions, suitable for multiple application scenarios in power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FU214A-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 3.8A
- **Technology**: Trench
- **Model**: FU214A-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 3.8A
- **Technology**: Trench
Domain and module applications：
Applications and modules
FU214A-VB MOSFET is suitable for medium and high voltage power management and switching applications. Its 250V withstand voltage makes it excel in high voltage power converters and inverters. In switching power modules and power control systems of electric vehicles, this MOSFET can stably handle switching operations under high voltage. In addition, FU214A-VB is also suitable for use in motor drives, power protection circuits and various power electronic equipment, providing efficient switching performance and reliable current control.
FU214A-VB MOSFET is suitable for medium and high voltage power management and switching applications. Its 250V withstand voltage makes it excel in high voltage power converters and inverters. In switching power modules and power control systems of electric vehicles, this MOSFET can stably handle switching operations under high voltage. In addition, FU214A-VB is also suitable for use in motor drives, power protection circuits and various power electronic equipment, providing efficient switching performance and reliable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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