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FU1N60A-VB Product details
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Product Introduction
**FU1N60A-VB** is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage and medium current applications. It has a drain-source voltage withstand capability of 650V and a maximum drain current of 2A. This MOSFET uses Plannar technology, providing reliable switching characteristics and stable performance, suitable for various electronic systems requiring high voltage tolerance and power control.
**FU1N60A-VB** is a high voltage N-Channel MOSFET in TO251 package, designed for high voltage and medium current applications. It has a drain-source voltage withstand capability of 650V and a maximum drain current of 2A. This MOSFET uses Plannar technology, providing reliable switching characteristics and stable performance, suitable for various electronic systems requiring high voltage tolerance and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules
1. **High-voltage power converter**:
FU1N60A-VB is suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. Although its on-resistance is relatively high, it can operate stably when handling high voltages of 650V, ensuring efficient power conversion and power management.
2. **Switching power supply**:
In switching power supply design, FU1N60A-VB is able to handle high-voltage switching operations. Its high withstand voltage capability makes it suitable for the high-voltage port of the power supply, and despite its high on-resistance, it can still provide stable performance in low-current applications.
3. **Inverter system**:
This MOSFET is suitable for inverter systems, especially in applications with high-voltage DC to AC conversion. It can withstand voltages up to 650V, ensuring the reliability and stability of the inverter system under high-voltage operation.
4. **Power Regulation and Control**:
In power regulation and control applications that require high voltage and medium current, FU1N60A-VB can be used as a switching element, such as a regulation module for high-voltage motor drives or high-voltage power supplies, to provide stable control and reliable performance.
With its high voltage tolerance and stability, FU1N60A-VB is suitable for a variety of high voltage and power applications, ensuring efficient operation of the system in complex environments.
1. **High-voltage power converter**:
FU1N60A-VB is suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. Although its on-resistance is relatively high, it can operate stably when handling high voltages of 650V, ensuring efficient power conversion and power management.
2. **Switching power supply**:
In switching power supply design, FU1N60A-VB is able to handle high-voltage switching operations. Its high withstand voltage capability makes it suitable for the high-voltage port of the power supply, and despite its high on-resistance, it can still provide stable performance in low-current applications.
3. **Inverter system**:
This MOSFET is suitable for inverter systems, especially in applications with high-voltage DC to AC conversion. It can withstand voltages up to 650V, ensuring the reliability and stability of the inverter system under high-voltage operation.
4. **Power Regulation and Control**:
In power regulation and control applications that require high voltage and medium current, FU1N60A-VB can be used as a switching element, such as a regulation module for high-voltage motor drives or high-voltage power supplies, to provide stable control and reliable performance.
With its high voltage tolerance and stability, FU1N60A-VB is suitable for a variety of high voltage and power applications, ensuring efficient operation of the system in complex environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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