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FU12N25D-VB Product details
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1. FU12N25D-VB MOSFET Product Introduction
FU12N25D-VB is a high voltage N-channel MOSFET in TO251 package, specially designed for high voltage applications. This MOSFET is manufactured using Trench technology, providing excellent on-resistance and switching performance, enabling it to operate stably under high voltage conditions. FU12N25D-VB has a large drain current carrying capacity and is suitable for high voltage environments in power switching and power management.
FU12N25D-VB is a high voltage N-channel MOSFET in TO251 package, specially designed for high voltage applications. This MOSFET is manufactured using Trench technology, providing excellent on-resistance and switching performance, enabling it to operate stably under high voltage conditions. FU12N25D-VB has a large drain current carrying capacity and is suitable for high voltage environments in power switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FU12N25D-VB MOSFET Detailed parameter description
- **Package form**: TO251
- **Configuration**: Unipolar-N channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ @ VGS=10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
- **Package form**: TO251
- **Configuration**: Unipolar-N channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ @ VGS=10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
Domain and module applications：
III. FU12N25D-VB MOSFET Application Fields and Module Examples
1. **Power Management**: FU12N25D-VB excels in high voltage power management applications and is suitable for use as a switching element in high voltage DC-DC converters (DC-DC converters). Its high drain voltage and low on-resistance can effectively manage high voltage power supplies, provide reliable power conversion and stable current control.
2. **Inverter**: In photovoltaic inverters or other high voltage inverter designs, the high voltage withstand capability of FU12N25D-VB enables it to handle higher voltage loads, ensuring efficient conversion and long-term stability of the inverter.
3. **High Voltage Motor Drive**: FU12N25D-VB can be used in high voltage motor drive circuits as a switching element to control the start and stop state of the motor. Its high voltage and high current carrying capacity make it suitable for motor control systems that require high voltage and high current.
4. **Power Electronics**: In various power electronic devices, such as power modules and high-voltage power switches, FU12N25D-VB provides reliable switching performance and current control. Its low on-resistance ensures that power losses are minimized, thereby improving the efficiency of the overall system.
In general, the high voltage and high current capabilities of FU12N25D-VB MOSFET make it an ideal choice for high-voltage applications. It is widely used in power management, inverters, motor drives and other fields to ensure the stability and reliability of the system under high voltage conditions.
1. **Power Management**: FU12N25D-VB excels in high voltage power management applications and is suitable for use as a switching element in high voltage DC-DC converters (DC-DC converters). Its high drain voltage and low on-resistance can effectively manage high voltage power supplies, provide reliable power conversion and stable current control.
2. **Inverter**: In photovoltaic inverters or other high voltage inverter designs, the high voltage withstand capability of FU12N25D-VB enables it to handle higher voltage loads, ensuring efficient conversion and long-term stability of the inverter.
3. **High Voltage Motor Drive**: FU12N25D-VB can be used in high voltage motor drive circuits as a switching element to control the start and stop state of the motor. Its high voltage and high current carrying capacity make it suitable for motor control systems that require high voltage and high current.
4. **Power Electronics**: In various power electronic devices, such as power modules and high-voltage power switches, FU12N25D-VB provides reliable switching performance and current control. Its low on-resistance ensures that power losses are minimized, thereby improving the efficiency of the overall system.
In general, the high voltage and high current capabilities of FU12N25D-VB MOSFET make it an ideal choice for high-voltage applications. It is widely used in power management, inverters, motor drives and other fields to ensure the stability and reliability of the system under high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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