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FU120N-VB Product details
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1. FU120N-VB Product Introduction
FU120N-VB is a single N-channel MOSFET in TO251 package, designed for medium and high voltage applications. It has high voltage resistance, maximum drain-source voltage of 100V, and provides up to 12A drain current handling capability. This MOSFET uses advanced trench technology, with low on-resistance and low threshold voltage, which provides excellent performance in switching applications. FU120N-VB is suitable for electronic devices and power systems that require high voltage tolerance and high current handling.
FU120N-VB is a single N-channel MOSFET in TO251 package, designed for medium and high voltage applications. It has high voltage resistance, maximum drain-source voltage of 100V, and provides up to 12A drain current handling capability. This MOSFET uses advanced trench technology, with low on-resistance and low threshold voltage, which provides excellent performance in switching applications. FU120N-VB is suitable for electronic devices and power systems that require high voltage tolerance and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FU120N-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
The design of FU120N-VB makes it excel in a variety of application fields. Here are some specific application examples:
1. **Power management**: Due to its ability to withstand drain-source voltages up to 100V, FU120N-VB is ideal for power management modules such as DC-DC converters and switching power supplies. The low on-resistance of this MOSFET can effectively reduce power losses and improve power efficiency.
2. **Motor control**: In motor drive applications that require high current handling, such as electric vehicles and industrial motor drives, FU120N-VB provides stable switching performance and high current handling capabilities to ensure efficient drive and control of the motor.
3. **Power switching**: Suitable for high-voltage power switching applications such as power converters and load switches. The high voltage withstand capability and low on-resistance of FU120N-VB enable it to provide reliable switching performance in these applications.
4. **Protection circuit**: Used in high voltage protection circuits to protect sensitive components from overvoltage or overcurrent. Its high voltage tolerance and low on-resistance make FU120N-VB an ideal choice to ensure system stability and reliability.
The design of FU120N-VB makes it excel in a variety of application fields. Here are some specific application examples:
1. **Power management**: Due to its ability to withstand drain-source voltages up to 100V, FU120N-VB is ideal for power management modules such as DC-DC converters and switching power supplies. The low on-resistance of this MOSFET can effectively reduce power losses and improve power efficiency.
2. **Motor control**: In motor drive applications that require high current handling, such as electric vehicles and industrial motor drives, FU120N-VB provides stable switching performance and high current handling capabilities to ensure efficient drive and control of the motor.
3. **Power switching**: Suitable for high-voltage power switching applications such as power converters and load switches. The high voltage withstand capability and low on-resistance of FU120N-VB enable it to provide reliable switching performance in these applications.
4. **Protection circuit**: Used in high voltage protection circuits to protect sensitive components from overvoltage or overcurrent. Its high voltage tolerance and low on-resistance make FU120N-VB an ideal choice to ensure system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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