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FU1010Z-VB Product details
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Product Introduction: FU1010Z-VB
FU1010Z-VB is a single-channel N-type MOSFET in TO251 package, designed for high current and high efficiency applications. The maximum drain-source voltage of this MOSFET is 60V, which can withstand higher voltages while supporting a maximum drain current of 97A. Its threshold voltage is 2.5V, ensuring that the MOSFET can be turned on at a lower drive voltage. The on-resistance (RDS(ON)) is 6mΩ (at VGS=4.5V) and 5mΩ (at VGS=10V), respectively, which makes it have extremely low power consumption and heat loss during the switching process. The use of Trench technology makes the device perform well in high current applications and is suitable for various circuit designs requiring high efficiency and high current.
FU1010Z-VB is a single-channel N-type MOSFET in TO251 package, designed for high current and high efficiency applications. The maximum drain-source voltage of this MOSFET is 60V, which can withstand higher voltages while supporting a maximum drain current of 97A. Its threshold voltage is 2.5V, ensuring that the MOSFET can be turned on at a lower drive voltage. The on-resistance (RDS(ON)) is 6mΩ (at VGS=4.5V) and 5mΩ (at VGS=10V), respectively, which makes it have extremely low power consumption and heat loss during the switching process. The use of Trench technology makes the device perform well in high current applications and is suitable for various circuit designs requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package provides good heat dissipation and mechanical strength, suitable for medium and high power applications.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET is designed for a wide range of switching and amplification applications.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 2.5V
- The threshold voltage is 2.5V, which enables it to be effectively turned on at a lower control voltage, suitable for low voltage control circuits.
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- Very low on-resistance helps reduce power consumption and heat loss, improving overall efficiency.
7. **Drain current (ID)**: 97A
- Maximum drain current is 97A, suitable for applications that handle high currents.
8. **Technology**: Trench
- Using Trench technology, it provides excellent switching performance and low on-resistance, improving the overall performance and reliability of the device.
1. **Package**: TO251
- The TO251 package provides good heat dissipation and mechanical strength, suitable for medium and high power applications.
2. **Configuration**: Single channel N-type
- Single channel N-type MOSFET is designed for a wide range of switching and amplification applications.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, ensuring stable operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 2.5V
- The threshold voltage is 2.5V, which enables it to be effectively turned on at a lower control voltage, suitable for low voltage control circuits.
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- Very low on-resistance helps reduce power consumption and heat loss, improving overall efficiency.
7. **Drain current (ID)**: 97A
- Maximum drain current is 97A, suitable for applications that handle high currents.
8. **Technology**: Trench
- Using Trench technology, it provides excellent switching performance and low on-resistance, improving the overall performance and reliability of the device.
Domain and module applications：
Applicable fields and modules
1. **Power management**: FU1010Z-VB is suitable for high current power management modules such as power adapters and DC-DC converters. In these applications, this MOSFET is able to effectively handle high currents, providing efficient power conversion and management.
2. **Motor control**: Due to its high current handling capability and low power consumption characteristics, FU1010Z-VB is suitable for motor drive circuits, especially in motor control systems that require high current and high efficiency, such as motor drives for industrial motors, power tools, and household appliances.
3. **Power amplifier**: In power amplifier circuits, this MOSFET can be used as a switching element or power regulator, and its high current carrying capability and low on-resistance make it suitable for handling high power signals.
4. **Inverter**: In solar inverters and other high power inverter circuits, FU1010Z-VB is able to stably handle high current and voltage as a switching element, ensuring high efficiency and stable operation of the inverter.
5. **High Power Switch**: FU1010Z-VB is suitable for high power switching circuits such as power switching and high power load control. It can effectively handle large current loads and provide stable switching performance.
Due to its excellent high current handling capability and low power consumption characteristics, this MOSFET is widely used in various high power circuits and equipment that require efficient current control and processing.
1. **Power management**: FU1010Z-VB is suitable for high current power management modules such as power adapters and DC-DC converters. In these applications, this MOSFET is able to effectively handle high currents, providing efficient power conversion and management.
2. **Motor control**: Due to its high current handling capability and low power consumption characteristics, FU1010Z-VB is suitable for motor drive circuits, especially in motor control systems that require high current and high efficiency, such as motor drives for industrial motors, power tools, and household appliances.
3. **Power amplifier**: In power amplifier circuits, this MOSFET can be used as a switching element or power regulator, and its high current carrying capability and low on-resistance make it suitable for handling high power signals.
4. **Inverter**: In solar inverters and other high power inverter circuits, FU1010Z-VB is able to stably handle high current and voltage as a switching element, ensuring high efficiency and stable operation of the inverter.
5. **High Power Switch**: FU1010Z-VB is suitable for high power switching circuits such as power switching and high power load control. It can effectively handle large current loads and provide stable switching performance.
Due to its excellent high current handling capability and low power consumption characteristics, this MOSFET is widely used in various high power circuits and equipment that require efficient current control and processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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