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FTW20N50A-VB Product details
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Product Introduction
FTW20N50A-VB is a high voltage N-Channel MOSFET in TO247 package, designed for high voltage and high current applications. It is manufactured using SJ_Multi-EPI technology, providing excellent electrical performance and reliability. With high voltage withstand capability and low on-resistance, this MOSFET is suitable for high power switches and power management systems, and can stably switch at high voltages.
FTW20N50A-VB is a high voltage N-Channel MOSFET in TO247 package, designed for high voltage and high current applications. It is manufactured using SJ_Multi-EPI technology, providing excellent electrical performance and reliability. With high voltage withstand capability and low on-resistance, this MOSFET is suitable for high power switches and power management systems, and can stably switch at high voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: FTW20N50A-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: FTW20N50A-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
FTW20N50A-VB MOSFET is suitable for applications that require high withstand voltage and high current. Its high withstand voltage capability makes it particularly suitable for high voltage power converters, inverters and motor drive circuits. In switching power supply design, this MOSFET can effectively handle switching operations under high voltage, improving system stability and efficiency. In addition, it is also widely used in power electronic equipment, power systems of electric vehicles, and high-power load switching modules to provide reliable power management solutions.
FTW20N50A-VB MOSFET is suitable for applications that require high withstand voltage and high current. Its high withstand voltage capability makes it particularly suitable for high voltage power converters, inverters and motor drive circuits. In switching power supply design, this MOSFET can effectively handle switching operations under high voltage, improving system stability and efficiency. In addition, it is also widely used in power electronic equipment, power systems of electric vehicles, and high-power load switching modules to provide reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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