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FTU05N50D-VB Product details
Back to previous pageProduct introduction：
1. FTU05N50D-VB Product Introduction
FTU05N50D-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, as well as a threshold voltage (Vth) of 3.5V, which can handle higher voltage and power requirements. This MOSFET uses SJ_Multi-EPI technology to optimize on-resistance and power loss, ensuring reliability and high efficiency in high-voltage applications. FTU05N50D-VB is suitable for various power management and high-voltage switching applications.
FTU05N50D-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, as well as a threshold voltage (Vth) of 3.5V, which can handle higher voltage and power requirements. This MOSFET uses SJ_Multi-EPI technology to optimize on-resistance and power loss, ensuring reliability and high efficiency in high-voltage applications. FTU05N50D-VB is suitable for various power management and high-voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FTU05N50D-VB
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples
FTU05N50D-VB MOSFET is suitable for multiple high voltage application scenarios due to its high withstand voltage and moderate on-resistance. Here are several typical application fields:
1. **Power conversion and inverter**:
- In high voltage inverter and power conversion systems, FTU05N50D-VB acts as a switching element to effectively control the conversion and transmission of power. Its high VDS of 650V enables it to cope with high voltage DC-AC and AC-DC conversion applications.
2. **Power management**:
- Suitable for various power management systems, such as high voltage power switches and power adapters. The low on-resistance of FTU05N50D-VB helps improve the efficiency of the power system, reduce power consumption and heat generation.
3. **Industrial Equipment**:
- In high voltage load control of industrial equipment, this MOSFET can provide reliable switching performance and is suitable for switch management of motor control, electric drive and high power load.
4. **High Voltage Electronic Equipment**:
- In electronic equipment that needs to handle high voltage, such as high voltage power supplies and high voltage battery management systems, the high VDS and suitable ID of FTU05N50D-VB make it an ideal choice to ensure stable operation and efficient energy management of the equipment.
Through these application examples, FTU05N50D-VB demonstrates its wide applicability in high voltage and power management, and can provide reliable solutions for various high voltage applications.
FTU05N50D-VB MOSFET is suitable for multiple high voltage application scenarios due to its high withstand voltage and moderate on-resistance. Here are several typical application fields:
1. **Power conversion and inverter**:
- In high voltage inverter and power conversion systems, FTU05N50D-VB acts as a switching element to effectively control the conversion and transmission of power. Its high VDS of 650V enables it to cope with high voltage DC-AC and AC-DC conversion applications.
2. **Power management**:
- Suitable for various power management systems, such as high voltage power switches and power adapters. The low on-resistance of FTU05N50D-VB helps improve the efficiency of the power system, reduce power consumption and heat generation.
3. **Industrial Equipment**:
- In high voltage load control of industrial equipment, this MOSFET can provide reliable switching performance and is suitable for switch management of motor control, electric drive and high power load.
4. **High Voltage Electronic Equipment**:
- In electronic equipment that needs to handle high voltage, such as high voltage power supplies and high voltage battery management systems, the high VDS and suitable ID of FTU05N50D-VB make it an ideal choice to ensure stable operation and efficient energy management of the equipment.
Through these application examples, FTU05N50D-VB demonstrates its wide applicability in high voltage and power management, and can provide reliable solutions for various high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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