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FTU03N80A-VB Product details
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Product Introduction
**FTU03N80A-VB** is a high voltage N-Channel MOSFET in TO251 package, designed to withstand high voltage and high power applications. Its 800V drain-source voltage withstand capability and 2A maximum drain current make it suitable for various high voltage environments. FTU03N80A-VB adopts SJ_Multi-EPI technology, providing excellent switching characteristics and durability, suitable for high voltage power supply and power control systems.
**FTU03N80A-VB** is a high voltage N-Channel MOSFET in TO251 package, designed to withstand high voltage and high power applications. Its 800V drain-source voltage withstand capability and 2A maximum drain current make it suitable for various high voltage environments. FTU03N80A-VB adopts SJ_Multi-EPI technology, providing excellent switching characteristics and durability, suitable for high voltage power supply and power control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 800V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Drain Current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 800V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Drain Current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage power management**:
The FTU03N80A-VB is ideal for high-voltage power management systems, such as high-voltage DC-DC converters. In these applications, the MOSFET can handle voltages up to 800V, while its higher on-resistance can accommodate certain power requirements.
2. **Switching power supply**:
In switching power supply designs, the FTU03N80A-VB can be used for switching control of the high-voltage portion. Despite its relatively high on-resistance, it can still operate stably within the appropriate current and voltage range, making it suitable for applications that require high voltage tolerance.
3. **Inverter system**:
This MOSFET can be used in inverter systems, especially in the process of converting high-voltage DC power to AC power. The FTU03N80A-VB is able to effectively manage high voltages while ensuring the reliability of the inverter system.
4. **Power amplifier**:
In the power amplifier design, FTU03N80A-VB can be used as a switching element in the high voltage segment to process high voltage signals and ensure the stability and efficiency of the system.
FTU03N80A-VB is suitable for applications that require high voltage and power control through its high voltage withstand capability and stability, ensuring the reliability of the system under various high voltage conditions.
1. **High-voltage power management**:
The FTU03N80A-VB is ideal for high-voltage power management systems, such as high-voltage DC-DC converters. In these applications, the MOSFET can handle voltages up to 800V, while its higher on-resistance can accommodate certain power requirements.
2. **Switching power supply**:
In switching power supply designs, the FTU03N80A-VB can be used for switching control of the high-voltage portion. Despite its relatively high on-resistance, it can still operate stably within the appropriate current and voltage range, making it suitable for applications that require high voltage tolerance.
3. **Inverter system**:
This MOSFET can be used in inverter systems, especially in the process of converting high-voltage DC power to AC power. The FTU03N80A-VB is able to effectively manage high voltages while ensuring the reliability of the inverter system.
4. **Power amplifier**:
In the power amplifier design, FTU03N80A-VB can be used as a switching element in the high voltage segment to process high voltage signals and ensure the stability and efficiency of the system.
FTU03N80A-VB is suitable for applications that require high voltage and power control through its high voltage withstand capability and stability, ensuring the reliability of the system under various high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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