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FTU02N65C-VB Product details
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1. FTU02N65C-VB MOSFET Product Introduction
FTU02N65C-VB is a high-voltage N-channel MOSFET in a TO251 package, designed to handle drain-source voltages (VDS) up to 650V. The device has a gate-source voltage (VGS) range of ±30V, allowing flexible gate drive configurations. The threshold voltage (Vth) is 3.5V, ensuring that the device can be turned on at a relatively low gate voltage. FTU02N65C-VB uses Plannar technology and has good voltage resistance and reliability. At a gate drive voltage of 10V, its on-resistance (RDS(ON)) is 4300mΩ, which is suitable for applications that require high voltage resistance but relatively low current requirements. The maximum drain current (ID) is 2A, making it an excellent performer in high-voltage power management.
FTU02N65C-VB is a high-voltage N-channel MOSFET in a TO251 package, designed to handle drain-source voltages (VDS) up to 650V. The device has a gate-source voltage (VGS) range of ±30V, allowing flexible gate drive configurations. The threshold voltage (Vth) is 3.5V, ensuring that the device can be turned on at a relatively low gate voltage. FTU02N65C-VB uses Plannar technology and has good voltage resistance and reliability. At a gate drive voltage of 10V, its on-resistance (RDS(ON)) is 4300mΩ, which is suitable for applications that require high voltage resistance but relatively low current requirements. The maximum drain current (ID) is 2A, making it an excellent performer in high-voltage power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FTU02N65C-VB MOSFET
1. **Package type**: TO251
2. **Configuration**: Single channel N-Channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
7. **Drain current (ID)**: 2A
8. **Technology**: Plannar
9. **Other features**: High withstand voltage, suitable for high voltage applications.
1. **Package type**: TO251
2. **Configuration**: Single channel N-Channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
7. **Drain current (ID)**: 2A
8. **Technology**: Plannar
9. **Other features**: High withstand voltage, suitable for high voltage applications.
Domain and module applications：
3. Application fields and module examples of FTU02N65C-VB MOSFET
Due to its high voltage tolerance and moderate current handling capability, FTU02N65C-VB MOSFET is very suitable for the following fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply, FTU02N65C-VB can be used as main switch or protection switch, handling high voltage of 650V, providing stable voltage conversion and protecting circuit from overvoltage conditions.
2. **Motor drive**: Suitable for high voltage motor drive system, this MOSFET can control the switching of motor in high voltage environment, suitable for industrial motor drive and household appliance motor control, providing reliable current handling capability.
3. **Inverter**: In photovoltaic inverter and other high voltage inverter applications, FTU02N65C-VB can withstand voltage up to 650V, suitable for power conversion and regulation, ensuring efficient operation of inverter and system stability.
4. **Power protection**: Due to its high voltage resistance, this MOSFET can be used in power protection circuits to prevent high voltage from damaging downstream components and ensure the safe operation of the overall system.
Due to its high voltage tolerance and moderate current handling capability, FTU02N65C-VB MOSFET is very suitable for the following fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply, FTU02N65C-VB can be used as main switch or protection switch, handling high voltage of 650V, providing stable voltage conversion and protecting circuit from overvoltage conditions.
2. **Motor drive**: Suitable for high voltage motor drive system, this MOSFET can control the switching of motor in high voltage environment, suitable for industrial motor drive and household appliance motor control, providing reliable current handling capability.
3. **Inverter**: In photovoltaic inverter and other high voltage inverter applications, FTU02N65C-VB can withstand voltage up to 650V, suitable for power conversion and regulation, ensuring efficient operation of inverter and system stability.
4. **Power protection**: Due to its high voltage resistance, this MOSFET can be used in power protection circuits to prevent high voltage from damaging downstream components and ensure the safe operation of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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