中文
English
FTS2001-VB Product details
Back to previous pageProduct introduction：
1. FTS2001-VB MOSFET Product Introduction
FTS2001-VB is a high-performance N-channel MOSFET in TSSOP8 package with common drain configuration. This MOSFET adopts advanced Trench technology to provide low on-resistance and excellent switching performance, and is particularly suitable for applications requiring efficient power management and low power consumption. FTS2001-VB is designed to provide high current carrying capacity in low voltage environment, making it an ideal choice for efficient switching and power management in electronic equipment.
FTS2001-VB is a high-performance N-channel MOSFET in TSSOP8 package with common drain configuration. This MOSFET adopts advanced Trench technology to provide low on-resistance and excellent switching performance, and is particularly suitable for applications requiring efficient power management and low power consumption. FTS2001-VB is designed to provide high current carrying capacity in low voltage environment, making it an ideal choice for efficient switching and power management in electronic equipment.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. FTS2001-VB MOSFET Detailed parameter description
- **Package form**: TSSOP8
- **Configuration**: Common drain-N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
- **Package form**: TSSOP8
- **Configuration**: Common drain-N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
Domain and module applications：
III. FTS2001-VB MOSFET Applications and Module Examples
1. **DC-DC Converter**: The low on-resistance and high switching speed of FTS2001-VB make it very suitable for synchronous switching in DC-DC converters. Its excellent performance helps improve conversion efficiency and reduce power consumption, thereby providing higher energy efficiency in power management.
2. **Battery Management System**: In the battery management system of portable electronic devices, FTS2001-VB can be used as an efficient load switch. Its low RDS(ON) characteristics reduce the power consumption during battery discharge, improving the endurance and overall efficiency of the device.
3. **Motor Drive Circuit**: FTS2001-VB is suitable for low-voltage motor drive applications. Its high current carrying capacity and fast switching characteristics can effectively control the operating state of the motor and ensure stable operation of the motor under high load conditions.
4. **Load Switch**: The FTS2001-VB can be used in load switch circuits to control the on/off state of different loads. Its low on-resistance ensures low power operation while improving the overall reliability and stability of the circuit.
In general, the low on-resistance and high switching speed of the FTS2001-VB MOSFET make it excellent in a variety of low-voltage, high-efficiency applications, providing an efficient and reliable switching solution for a variety of electronic devices.
1. **DC-DC Converter**: The low on-resistance and high switching speed of FTS2001-VB make it very suitable for synchronous switching in DC-DC converters. Its excellent performance helps improve conversion efficiency and reduce power consumption, thereby providing higher energy efficiency in power management.
2. **Battery Management System**: In the battery management system of portable electronic devices, FTS2001-VB can be used as an efficient load switch. Its low RDS(ON) characteristics reduce the power consumption during battery discharge, improving the endurance and overall efficiency of the device.
3. **Motor Drive Circuit**: FTS2001-VB is suitable for low-voltage motor drive applications. Its high current carrying capacity and fast switching characteristics can effectively control the operating state of the motor and ensure stable operation of the motor under high load conditions.
4. **Load Switch**: The FTS2001-VB can be used in load switch circuits to control the on/off state of different loads. Its low on-resistance ensures low power operation while improving the overall reliability and stability of the circuit.
In general, the low on-resistance and high switching speed of the FTS2001-VB MOSFET make it excellent in a variety of low-voltage, high-efficiency applications, providing an efficient and reliable switching solution for a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
