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FTS1001-VB Product details
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1. Product introduction of FTS1001-VB model
FTS1001-VB is a high-performance dual-channel P-channel MOSFET in TSSOP8 package, designed for negative voltage applications. The device has a bipolar configuration (dual P-channel), which enables it to handle positive and negative currents on the same chip, suitable for bipolar power supply circuits. Its drain-source voltage is -30V, and it can operate stably in a higher negative voltage environment. The threshold voltage of FTS1001-VB is -1.7V, allowing it to be turned on at a lower gate-source voltage, and it has a lower on-resistance, which helps reduce power losses. This MOSFET uses advanced trench technology to provide excellent switching performance and high reliability, and is very suitable for efficient power management and battery protection applications.
FTS1001-VB is a high-performance dual-channel P-channel MOSFET in TSSOP8 package, designed for negative voltage applications. The device has a bipolar configuration (dual P-channel), which enables it to handle positive and negative currents on the same chip, suitable for bipolar power supply circuits. Its drain-source voltage is -30V, and it can operate stably in a higher negative voltage environment. The threshold voltage of FTS1001-VB is -1.7V, allowing it to be turned on at a lower gate-source voltage, and it has a lower on-resistance, which helps reduce power losses. This MOSFET uses advanced trench technology to provide excellent switching performance and high reliability, and is very suitable for efficient power management and battery protection applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
2. Detailed parameter description of FTS1001-VB model
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Drain current (ID)**: -5.2A
- **Technology type**: Trench technology (Trench)
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Drain current (ID)**: -5.2A
- **Technology type**: Trench technology (Trench)
Domain and module applications：
3. Application fields and module examples of FTS1001-VB
1. **Battery protection circuit**:
The dual P-channel configuration and low on-resistance of FTS1001-VB make it very suitable for battery protection circuits. Especially in scenarios where negative voltage needs to be handled, such as over-discharge protection of lithium batteries and battery reverse connection protection. These applications require high reliability and low power loss to ensure the safety and stability of the battery.
2. **Negative voltage power switch**:
In negative voltage power management systems, FTS1001-VB can effectively control the switching operation of negative voltage. For example, in negative voltage converters and negative voltage regulators, the device can be used as an efficient switching element to optimize the performance of the power supply and reduce power loss.
3. **Efficient power management module**:
FTS1001-VB is also suitable for efficient power management modules such as DC-DC converters and load switches. These modules require high efficiency and low on-resistance to achieve optimal power conversion and system stability. Its advanced trench technology provides excellent switching performance and is suitable for a variety of applications requiring high efficiency.
The FTS1001-VB's dual P-channel configuration and high-performance features make it excel in applications that require handling negative voltages and efficient power management.
1. **Battery protection circuit**:
The dual P-channel configuration and low on-resistance of FTS1001-VB make it very suitable for battery protection circuits. Especially in scenarios where negative voltage needs to be handled, such as over-discharge protection of lithium batteries and battery reverse connection protection. These applications require high reliability and low power loss to ensure the safety and stability of the battery.
2. **Negative voltage power switch**:
In negative voltage power management systems, FTS1001-VB can effectively control the switching operation of negative voltage. For example, in negative voltage converters and negative voltage regulators, the device can be used as an efficient switching element to optimize the performance of the power supply and reduce power loss.
3. **Efficient power management module**:
FTS1001-VB is also suitable for efficient power management modules such as DC-DC converters and load switches. These modules require high efficiency and low on-resistance to achieve optimal power conversion and system stability. Its advanced trench technology provides excellent switching performance and is suitable for a variety of applications requiring high efficiency.
The FTS1001-VB's dual P-channel configuration and high-performance features make it excel in applications that require handling negative voltages and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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