Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- This package provides good heat dissipation and mechanical strength, suitable for applications requiring higher power and good heat dissipation.
2. **Configuration**: Single-channel N-type
- Single-channel N-type MOSFET is designed for common switching and amplification applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can handle voltage fluctuations in high-voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±30V
- The gate-to-source voltage allows a range of ±30V, ensuring operation under a wide range of control voltages.
5. **Threshold voltage (Vth)**: 3.5V
- The threshold voltage is 3.5V, which is suitable for most control voltage applications and ensures good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 3900mΩ @ VGS=4.5V
- 3120mΩ @ VGS=10V
- The relatively high on-resistance is suitable for applications requiring higher current carrying capacity and higher power handling.
7. **Drain current (ID)**: 2A
- The maximum drain current is 2A, suitable for medium power switching applications.
8. **Technology**: Planar
- Planar technology ensures good stability and consistent performance, suitable for reliability requirements in high voltage applications.
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: FTP02N65C-VB is suitable for switching elements in high voltage switching power supply modules. In high voltage and medium current power converters, it is able to work stably and provide the necessary current handling capability.
2. **Power amplifier**: In power amplifier circuits, FTP02N65C-VB can be used as a switching element, and its high withstand voltage characteristics are suitable for high voltage amplification applications, ensuring stable power output and reliable performance.
3. **Motor control**: Due to its high voltage resistance and moderate current carrying capacity, FTP02N65C-VB is suitable for motor drive circuits, especially in motor control systems that need to handle high voltage loads.
4. **Inverter**: In solar inverters and other high voltage inverter circuits, this MOSFET can be used as a switching element, and its high voltage withstand capability and reliability are suitable for these demanding applications.
5. **High Voltage Protection Circuit**: FTP02N65C-VB can be used in high voltage protection circuits to protect other circuit components from excessive voltage. Its high withstand voltage characteristics make it suitable for various power protection and overvoltage protection applications.
This MOSFET is widely used in various high voltage and medium power electronic devices due to its high voltage withstand capability and good switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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