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FTD2022-VB Product details
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Product Introduction
FTD2022-VB is a high-efficiency N+N-Channel MOSFET manufactured with advanced Trench technology and designed for low voltage and high current applications. It has low on-resistance and high drive current capability, enabling efficient switching operation at low gate voltage. This MOSFET is packaged in TSSOP8, suitable for compact circuit design.
FTD2022-VB is a high-efficiency N+N-Channel MOSFET manufactured with advanced Trench technology and designed for low voltage and high current applications. It has low on-resistance and high drive current capability, enabling efficient switching operation at low gate voltage. This MOSFET is packaged in TSSOP8, suitable for compact circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: FTD2022-VB
- **Package**: TSSOP8
- **Configuration**: Common drain N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 8.6A
- **Technology**: Trench
- **Model**: FTD2022-VB
- **Package**: TSSOP8
- **Configuration**: Common drain N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 8.6A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
FTD2022-VB MOSFET is widely used in low-voltage power management, DC-DC converters, and battery management systems. Due to its low on-resistance and high current capability, it is very suitable for use in high-efficiency switching circuits such as motor drive modules, load switch circuits, and LED drive circuits. In addition, the device also performs well in portable devices such as smartphones and tablets, helping to improve the efficiency of power management and extend battery life.
FTD2022-VB MOSFET is widely used in low-voltage power management, DC-DC converters, and battery management systems. Due to its low on-resistance and high current capability, it is very suitable for use in high-efficiency switching circuits such as motor drive modules, load switch circuits, and LED drive circuits. In addition, the device also performs well in portable devices such as smartphones and tablets, helping to improve the efficiency of power management and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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