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FTD2017A-VB Product details
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Product Introduction
**FTD2017A-VB** is a high-performance N-Channel MOSFET in TSSOP8 package, designed for high-performance applications. The device has low RDS(ON) and high ID, making it suitable for use in a variety of circuits requiring high switching speed and high current carrying capacity. Its advanced Trench technology ensures lower on-resistance and higher switching efficiency, thereby improving overall system performance.
**FTD2017A-VB** is a high-performance N-Channel MOSFET in TSSOP8 package, designed for high-performance applications. The device has low RDS(ON) and high ID, making it suitable for use in a variety of circuits requiring high switching speed and high current carrying capacity. Its advanced Trench technology ensures lower on-resistance and higher switching efficiency, thereby improving overall system performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6.6A
- **Technology**: Trench
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6.6A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
FTD2017A-VB can be used in power management modules to provide high-efficiency switching capability with low on-resistance. As a switching element in DC-DC converters, it can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Power amplifier**:
In power amplifier design, the low RDS(ON) characteristics of FTD2017A-VB make it suitable for high current drive applications, helping to reduce power loss, improve thermal management, and improve amplifier stability and performance.
3. **Electric vehicle (EV) charging station**:
In electric vehicle charging stations, FTD2017A-VB can be used as part of the switch control circuit to handle current and voltage changes during charging, ensuring the stability and safety of the charging process.
4. **Computer Hardware**:
In computer hardware, this MOSFET can be used in power management and voltage regulation modules on the motherboard to support efficient power conversion and stable power supply.
With its superior performance and wide range of applications, FTD2017A-VB is an ideal choice for various electronic systems that require high current and low on-resistance.
1. **Power management system**:
FTD2017A-VB can be used in power management modules to provide high-efficiency switching capability with low on-resistance. As a switching element in DC-DC converters, it can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Power amplifier**:
In power amplifier design, the low RDS(ON) characteristics of FTD2017A-VB make it suitable for high current drive applications, helping to reduce power loss, improve thermal management, and improve amplifier stability and performance.
3. **Electric vehicle (EV) charging station**:
In electric vehicle charging stations, FTD2017A-VB can be used as part of the switch control circuit to handle current and voltage changes during charging, ensuring the stability and safety of the charging process.
4. **Computer Hardware**:
In computer hardware, this MOSFET can be used in power management and voltage regulation modules on the motherboard to support efficient power conversion and stable power supply.
With its superior performance and wide range of applications, FTD2017A-VB is an ideal choice for various electronic systems that require high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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