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FTD2016-VB Product details
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1. FTD2016-VB MOSFET Product Introduction
FTD2016-VB is a dual-channel (Common Drain-N+N-Channel) MOSFET in TSSOP8 package, suitable for low-voltage applications below 30V. The device has excellent on-resistance characteristics. At a gate drive voltage of 4.5V, its on-resistance (RDS(ON)) is 19mΩ, and at a gate drive voltage of 10V, the on-resistance can be reduced to 12mΩ. With its Trench technology, the FTD2016-VB has lower gate charge and higher current handling capability, making it excellent in high-efficiency and low-power applications. The device can withstand a maximum drain current of 8.6A and has a gate drive voltage range of 20V (VGS = ±20V).
FTD2016-VB is a dual-channel (Common Drain-N+N-Channel) MOSFET in TSSOP8 package, suitable for low-voltage applications below 30V. The device has excellent on-resistance characteristics. At a gate drive voltage of 4.5V, its on-resistance (RDS(ON)) is 19mΩ, and at a gate drive voltage of 10V, the on-resistance can be reduced to 12mΩ. With its Trench technology, the FTD2016-VB has lower gate charge and higher current handling capability, making it excellent in high-efficiency and low-power applications. The device can withstand a maximum drain current of 8.6A and has a gate drive voltage range of 20V (VGS = ±20V).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description of FTD2016-VB MOSFET
1. **Package type**: TSSOP8
2. **Configuration**: Dual channel, common drain N+N-Channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
7. **Drain current (ID)**: 8.6A
8. **Technology**: Trench
9. **Other features**: High efficiency and low loss, suitable for high-speed switching applications.
1. **Package type**: TSSOP8
2. **Configuration**: Dual channel, common drain N+N-Channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 19mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
7. **Drain current (ID)**: 8.6A
8. **Technology**: Trench
9. **Other features**: High efficiency and low loss, suitable for high-speed switching applications.
Domain and module applications：
III. Application fields and module examples of FTD2016-VB MOSFET
FTD2016-VB MOSFET is suitable for many fields, especially in low-voltage power management, switching power supply (SMPS), load switch, DC-DC converter and battery management system modules.
1. **Power management**: In portable devices such as laptops and smart phones, FTD2016-VB is used in power management modules to effectively reduce power consumption and increase device life.
2. **Switching power supply**: In AC-DC and DC-DC switching power supplies, FTD2016-VB is used to efficiently convert voltage, reduce energy loss and improve overall system efficiency.
3. **Load switch**: Due to its low on-resistance and high current handling capability, FTD2016-VB is suitable for load switch applications that require fast response, such as USB power switch.
4. **Battery Management System**: In the battery management system of power tools and electric vehicles, FTD2016-VB is used to control the battery charging and discharging process to ensure system safety and extend battery life.
FTD2016-VB MOSFET is suitable for many fields, especially in low-voltage power management, switching power supply (SMPS), load switch, DC-DC converter and battery management system modules.
1. **Power management**: In portable devices such as laptops and smart phones, FTD2016-VB is used in power management modules to effectively reduce power consumption and increase device life.
2. **Switching power supply**: In AC-DC and DC-DC switching power supplies, FTD2016-VB is used to efficiently convert voltage, reduce energy loss and improve overall system efficiency.
3. **Load switch**: Due to its low on-resistance and high current handling capability, FTD2016-VB is suitable for load switch applications that require fast response, such as USB power switch.
4. **Battery Management System**: In the battery management system of power tools and electric vehicles, FTD2016-VB is used to control the battery charging and discharging process to ensure system safety and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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