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FTD2014-VB Product details
Back to previous pageProduct introduction：
1. FTD2014-VB MOSFET Product Introduction
FTD2014-VB is a MOSFET designed based on advanced Trench technology and is packaged in TSSOP8. The device adopts a common drain structure and consists of two N-channel MOSFETs. It has low on-resistance and excellent switching performance, making it very suitable for high-efficiency power management applications. Its design enables it to perform well in low-voltage operating environments, especially in applications that require fast switching and low power consumption.
FTD2014-VB is a MOSFET designed based on advanced Trench technology and is packaged in TSSOP8. The device adopts a common drain structure and consists of two N-channel MOSFETs. It has low on-resistance and excellent switching performance, making it very suitable for high-efficiency power management applications. Its design enables it to perform well in low-voltage operating environments, especially in applications that require fast switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. FTD2014-VB MOSFET Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common drain-N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
- **Package**: TSSOP8
- **Configuration**: Common drain-N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
Domain and module applications：
III. Applications and module examples of FTD2014-VB MOSFET
1. **DC-DC converter**: Due to its low on-resistance and high-speed switching performance, FTD2014-VB is very suitable for use as a power switch element in a synchronous buck converter. These characteristics help improve conversion efficiency and reduce heat generation.
2. **Battery protection module**: FTD2014-VB can be used in battery management systems in portable devices. Its low RDS(ON) can effectively reduce power loss when the battery is discharged, thereby extending the device's battery life.
3. **Motor driver**: In small motor drive applications, this MOSFET can be used as a switching element in a low-voltage motor controller to ensure efficient operation of the motor while reducing power loss.
4. **Load switch**: Due to its low on-resistance, FTD2014-VB can be used in load switch circuits to control and protect load devices in the circuit, ensuring system reliability and efficiency.
In summary, FTD2014-VB has broad application prospects, especially suitable for electronic devices with high requirements on switching speed and power efficiency.
1. **DC-DC converter**: Due to its low on-resistance and high-speed switching performance, FTD2014-VB is very suitable for use as a power switch element in a synchronous buck converter. These characteristics help improve conversion efficiency and reduce heat generation.
2. **Battery protection module**: FTD2014-VB can be used in battery management systems in portable devices. Its low RDS(ON) can effectively reduce power loss when the battery is discharged, thereby extending the device's battery life.
3. **Motor driver**: In small motor drive applications, this MOSFET can be used as a switching element in a low-voltage motor controller to ensure efficient operation of the motor while reducing power loss.
4. **Load switch**: Due to its low on-resistance, FTD2014-VB can be used in load switch circuits to control and protect load devices in the circuit, ensuring system reliability and efficiency.
In summary, FTD2014-VB has broad application prospects, especially suitable for electronic devices with high requirements on switching speed and power efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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