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FTD2013-VB Product details
Back to previous pageProduct introduction：
1. FTD2013-VB Product Introduction
FTD2013-VB is a dual N-channel MOSFET in TSSOP8 package with common drain configuration, designed for low voltage applications. The device has a maximum drain-source voltage of 30V, a gate drive voltage range of ±20V, low on-resistance and high current handling capability. This MOSFET uses advanced trench technology to provide excellent conduction performance and switching efficiency, and is very suitable for applications that require compact packaging and high efficiency.
FTD2013-VB is a dual N-channel MOSFET in TSSOP8 package with common drain configuration, designed for low voltage applications. The device has a maximum drain-source voltage of 30V, a gate drive voltage range of ±20V, low on-resistance and high current handling capability. This MOSFET uses advanced trench technology to provide excellent conduction performance and switching efficiency, and is very suitable for applications that require compact packaging and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. FTD2013-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common drain N+N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench technology
- **Package type**: TSSOP8
- **Configuration**: Common drain N+N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
FTD2013-VB is widely used in the following fields and modules due to its low on-resistance and compact package:
1. **Power management module**: DC-DC converters for portable devices such as laptops and tablets. This MOSFET can efficiently convert power at low voltages, improving the overall energy efficiency of the device.
2. **Load switch**: In scenarios where fast response and low power consumption are required, FTD2013-VB can be used as a load switch, such as in the power management IC of a smartphone, to reduce power consumption when switching between different modes.
3. **Motor driver**: Due to its high current handling capability, FTD2013-VB is suitable for driving small DC motors, such as micro motor drive modules in drones, providing stable current output and good heat dissipation performance.
4. **Low voltage switch application**: The device is very suitable for low voltage switching circuits, such as low voltage protection circuits used in consumer electronics, providing reliable switching functions in limited space.
FTD2013-VB is widely used in the following fields and modules due to its low on-resistance and compact package:
1. **Power management module**: DC-DC converters for portable devices such as laptops and tablets. This MOSFET can efficiently convert power at low voltages, improving the overall energy efficiency of the device.
2. **Load switch**: In scenarios where fast response and low power consumption are required, FTD2013-VB can be used as a load switch, such as in the power management IC of a smartphone, to reduce power consumption when switching between different modes.
3. **Motor driver**: Due to its high current handling capability, FTD2013-VB is suitable for driving small DC motors, such as micro motor drive modules in drones, providing stable current output and good heat dissipation performance.
4. **Low voltage switch application**: The device is very suitable for low voltage switching circuits, such as low voltage protection circuits used in consumer electronics, providing reliable switching functions in limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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