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FTD2011A-TL-E-VB Product details
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Product Introduction: FTD2011A-TL-E-VB
FTD2011A-TL-E-VB is a dual-channel common-source common-gate N+N type MOSFET in TSSOP8 package, mainly suitable for low voltage applications. It has a drain-source voltage (VDS) of 20V, a maximum drain current (ID) of 6.6A, and is designed with advanced Trench technology. It has an extremely low on-resistance (RDS(ON)), which is 32mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. This MOSFET has excellent switching performance and conduction capability, and is suitable for use in applications with limited space and requiring efficient current management.
FTD2011A-TL-E-VB is a dual-channel common-source common-gate N+N type MOSFET in TSSOP8 package, mainly suitable for low voltage applications. It has a drain-source voltage (VDS) of 20V, a maximum drain current (ID) of 6.6A, and is designed with advanced Trench technology. It has an extremely low on-resistance (RDS(ON)), which is 32mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. This MOSFET has excellent switching performance and conduction capability, and is suitable for use in applications with limited space and requiring efficient current management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
1. **Package**: TSSOP8
- This package type is suitable for applications that need to save space and require a high degree of integration.
2. **Configuration**: Common source and common gate N+N type dual channel
- Two N-channel MOSFETs share a source and can be used in bidirectional switches or bridge circuits.
3. **Drain-source voltage (VDS)**: 20V
- The maximum drain-source voltage is 20V, suitable for low-voltage circuits.
4. **Gate-source voltage (VGS)**: ±20V
- The allowable range of the gate-to-source voltage is ±20V, ensuring a wider driving voltage range.
5. **Threshold voltage (Vth)**: 0.5~1.5V
- The low startup voltage enables it to operate at a lower driving voltage, suitable for low-voltage control logic.
6. **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- Low on-resistance means the device can provide less power loss and higher efficiency during operation.
7. **Drain current (ID)**: 6.6A
- The maximum drain current is 6.6A, which supports high current applications and is suitable for high power control and management.
8. **Technology**: Trench
- The use of Trench technology provides better current handling capability and lower on-resistance, which is conducive to efficient energy transfer.
1. **Package**: TSSOP8
- This package type is suitable for applications that need to save space and require a high degree of integration.
2. **Configuration**: Common source and common gate N+N type dual channel
- Two N-channel MOSFETs share a source and can be used in bidirectional switches or bridge circuits.
3. **Drain-source voltage (VDS)**: 20V
- The maximum drain-source voltage is 20V, suitable for low-voltage circuits.
4. **Gate-source voltage (VGS)**: ±20V
- The allowable range of the gate-to-source voltage is ±20V, ensuring a wider driving voltage range.
5. **Threshold voltage (Vth)**: 0.5~1.5V
- The low startup voltage enables it to operate at a lower driving voltage, suitable for low-voltage control logic.
6. **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- Low on-resistance means the device can provide less power loss and higher efficiency during operation.
7. **Drain current (ID)**: 6.6A
- The maximum drain current is 6.6A, which supports high current applications and is suitable for high power control and management.
8. **Technology**: Trench
- The use of Trench technology provides better current handling capability and lower on-resistance, which is conducive to efficient energy transfer.
Domain and module applications：
Applicable fields and modules
1. **Power management module**: FTD2011A-TL-E-VB is suitable for low-voltage power management modules, such as battery management systems for portable electronic devices. Due to its low on-resistance and low power consumption characteristics, it can effectively extend battery life and reduce heat.
2. **DC-DC converter**: In a DC-DC step-down converter, this MOSFET can be used as a synchronous rectifier. Its fast switching speed and low conduction loss characteristics can improve the overall efficiency of the converter. It is suitable for notebook computers, power tools and other equipment.
3. **Load switch**: FTD2011A-TL-E-VB is suitable as a switch for various low-voltage loads, such as LED drive circuits and small motor control circuits. Its dual-channel design allows multiple loads to be controlled in a limited space.
4. **Communication Equipment**: In communications equipment, the FTD2011A-TL-E-VB can be used for signal switching and power amplifier control circuits, where its low voltage and low on-resistance characteristics can reduce power consumption while maintaining signal integrity.
This MOSFET is widely used in a variety of fields requiring efficient current control and compact design due to its high efficiency and low power consumption.
1. **Power management module**: FTD2011A-TL-E-VB is suitable for low-voltage power management modules, such as battery management systems for portable electronic devices. Due to its low on-resistance and low power consumption characteristics, it can effectively extend battery life and reduce heat.
2. **DC-DC converter**: In a DC-DC step-down converter, this MOSFET can be used as a synchronous rectifier. Its fast switching speed and low conduction loss characteristics can improve the overall efficiency of the converter. It is suitable for notebook computers, power tools and other equipment.
3. **Load switch**: FTD2011A-TL-E-VB is suitable as a switch for various low-voltage loads, such as LED drive circuits and small motor control circuits. Its dual-channel design allows multiple loads to be controlled in a limited space.
4. **Communication Equipment**: In communications equipment, the FTD2011A-TL-E-VB can be used for signal switching and power amplifier control circuits, where its low voltage and low on-resistance characteristics can reduce power consumption while maintaining signal integrity.
This MOSFET is widely used in a variety of fields requiring efficient current control and compact design due to its high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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