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FTD2005-VB Product details
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FTD2005-VB Product Introduction
**FTD2005-VB** is a dual N-Channel MOSFET in TSSOP8 package, configured as common source and common drain structure. The device has low on-resistance and low turn-on voltage, suitable for efficient switching operation in low-voltage applications. Its V_DS is 20V, which can withstand low voltage working environment, and through Trench technology optimization, it provides better conduction performance and switching speed, suitable for power management systems that require compact packaging and high efficiency.
**FTD2005-VB** is a dual N-Channel MOSFET in TSSOP8 package, configured as common source and common drain structure. The device has low on-resistance and low turn-on voltage, suitable for efficient switching operation in low-voltage applications. Its V_DS is 20V, which can withstand low voltage working environment, and through Trench technology optimization, it provides better conduction performance and switching speed, suitable for power management systems that require compact packaging and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: FTD2005-VB
- **Package**: TSSOP8
- **Configuration**: Common source and common drain dual N-Channel
- **Drain-source withstand voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5V to 1.5V
- **On-resistance (R_DS(ON))**:
- 32mΩ @ V_GS = 2.5V
- 22mΩ @ V_GS = 4.5V
- **Continuous leakage current (I_D)**: 6.6A
- **Technology**: Trench
- **Model**: FTD2005-VB
- **Package**: TSSOP8
- **Configuration**: Common source and common drain dual N-Channel
- **Drain-source withstand voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5V to 1.5V
- **On-resistance (R_DS(ON))**:
- 32mΩ @ V_GS = 2.5V
- 22mΩ @ V_GS = 4.5V
- **Continuous leakage current (I_D)**: 6.6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Battery Management System**
- **Application Examples**: The low on-resistance and low threshold voltage of FTD2005-VB make it very suitable for use in battery management systems (BMS), especially in the protection and management of low-voltage lithium battery packs, which can effectively reduce power loss and improve overall system efficiency.
2. **Load Switch**
- **Application Examples**: In load switch applications, the common source and common drain configuration of this MOSFET enables efficient switching at low voltages, which is suitable for use in power management modules of portable devices such as smartphones and laptops to control the on and off of power.
3. **DC-DC Converter**
- **Application Examples**: FTD2005-VB can be used in low-voltage DC-DC converters, especially in buck and boost converters that require high switching frequency and high efficiency, to help achieve circuit miniaturization and high performance.
4. **Charger Circuit**
- **Application Example**: In the charger circuit, FTD2005-VB can be used as a switching element, especially suitable for USB power adapters, wireless chargers and other devices, providing stable and efficient power transmission through its low on-resistance and high current capability.
FTD2005-VB performs well in low-voltage and high-performance applications such as battery management systems, load switches, DC-DC converters and charger circuits due to its common source and common drain configuration, low on-resistance and efficient Trench technology.
1. **Battery Management System**
- **Application Examples**: The low on-resistance and low threshold voltage of FTD2005-VB make it very suitable for use in battery management systems (BMS), especially in the protection and management of low-voltage lithium battery packs, which can effectively reduce power loss and improve overall system efficiency.
2. **Load Switch**
- **Application Examples**: In load switch applications, the common source and common drain configuration of this MOSFET enables efficient switching at low voltages, which is suitable for use in power management modules of portable devices such as smartphones and laptops to control the on and off of power.
3. **DC-DC Converter**
- **Application Examples**: FTD2005-VB can be used in low-voltage DC-DC converters, especially in buck and boost converters that require high switching frequency and high efficiency, to help achieve circuit miniaturization and high performance.
4. **Charger Circuit**
- **Application Example**: In the charger circuit, FTD2005-VB can be used as a switching element, especially suitable for USB power adapters, wireless chargers and other devices, providing stable and efficient power transmission through its low on-resistance and high current capability.
FTD2005-VB performs well in low-voltage and high-performance applications such as battery management systems, load switches, DC-DC converters and charger circuits due to its common source and common drain configuration, low on-resistance and efficient Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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