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FTD2001-VB Product details
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Product Introduction
**FTD2001-VB** is an N-channel MOSFET in a TSSOP8 package with a common drain configuration. The device uses Trench technology, has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) range of 0.5V to 1.5V. Its on-resistance (RDS(ON)) is 32mΩ at a gate-source voltage of 2.5V and 22mΩ at a gate-source voltage of 4.5V, supporting a maximum drain current (ID) of 6.6A. The FTD2001-VB is designed for low-voltage, high-efficiency switching applications and is suitable for circuit designs that require compact packaging and high performance.
**FTD2001-VB** is an N-channel MOSFET in a TSSOP8 package with a common drain configuration. The device uses Trench technology, has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) range of 0.5V to 1.5V. Its on-resistance (RDS(ON)) is 32mΩ at a gate-source voltage of 2.5V and 22mΩ at a gate-source voltage of 4.5V, supporting a maximum drain current (ID) of 6.6A. The FTD2001-VB is designed for low-voltage, high-efficiency switching applications and is suitable for circuit designs that require compact packaging and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 0.5V ~ 1.5V
- **On-Resistance (RDS(ON))**: 32mΩ @ VGS = 2.5V, 22mΩ @ VGS = 4.5V
- **Drain Current (ID)**: 6.6A
- **Technology**: Trench technology
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 0.5V ~ 1.5V
- **On-Resistance (RDS(ON))**: 32mΩ @ VGS = 2.5V, 22mΩ @ VGS = 4.5V
- **Drain Current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Battery Management Systems**: The FTD2001-VB is ideal for low voltage switching and protection circuits in battery management systems. Its low on-resistance and efficient switching performance enable it to effectively manage current flow in the battery pack, ensuring battery safety and extending its life.
2. **Portable Electronic Devices**: The compact package and efficient performance of this MOSFET make it an ideal choice for power management circuits in portable electronic devices such as smartphones, tablets, and wearable devices. These devices require high-performance components to be integrated in a limited space, and the FTD2001-VB is an ideal choice for such applications.
3. **DC-DC Converters**: The FTD2001-VB excels in low voltage DC-DC converters and is suitable for applications such as buck converters and boost converters. Its low on-resistance helps improve conversion efficiency and reduce power losses.
4. **Load Switch**: In load switch applications that require fast switching, the low on-resistance and fast response capability of the FTD2001-VB can provide stable and efficient switching operations, suitable for circuits that require precise control.
5. **Power Rail Switching**: In multi-power rail systems, this MOSFET can be used in power rail switching circuits. Through the common drain configuration, it ensures efficient switching and isolation between different power rails, which is suitable for modern complex multi-rail power systems.
Through these applications, the FTD2001-VB shows its wide applicability in low-voltage, high-efficiency circuits, especially in situations that require compact packaging and high performance, such as portable electronic devices, battery management, and DC-DC converters. Its Trench technology and common drain configuration further enhance its advantages in these applications.
1. **Battery Management Systems**: The FTD2001-VB is ideal for low voltage switching and protection circuits in battery management systems. Its low on-resistance and efficient switching performance enable it to effectively manage current flow in the battery pack, ensuring battery safety and extending its life.
2. **Portable Electronic Devices**: The compact package and efficient performance of this MOSFET make it an ideal choice for power management circuits in portable electronic devices such as smartphones, tablets, and wearable devices. These devices require high-performance components to be integrated in a limited space, and the FTD2001-VB is an ideal choice for such applications.
3. **DC-DC Converters**: The FTD2001-VB excels in low voltage DC-DC converters and is suitable for applications such as buck converters and boost converters. Its low on-resistance helps improve conversion efficiency and reduce power losses.
4. **Load Switch**: In load switch applications that require fast switching, the low on-resistance and fast response capability of the FTD2001-VB can provide stable and efficient switching operations, suitable for circuits that require precise control.
5. **Power Rail Switching**: In multi-power rail systems, this MOSFET can be used in power rail switching circuits. Through the common drain configuration, it ensures efficient switching and isolation between different power rails, which is suitable for modern complex multi-rail power systems.
Through these applications, the FTD2001-VB shows its wide applicability in low-voltage, high-efficiency circuits, especially in situations that require compact packaging and high performance, such as portable electronic devices, battery management, and DC-DC converters. Its Trench technology and common drain configuration further enhance its advantages in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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