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FTD100N10A-VB Product details
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Product Introduction
**FTD100N10A-VB** is a single-channel N-channel MOSFET in a TO252 package designed for a variety of medium and high voltage applications. The device has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. It uses Trench technology to achieve excellent switching performance and low on-resistance (RDS(ON)), which is 114mΩ at a VGS of 10V. Its low threshold voltage (Vth) of 1.8V enables fast switching and efficient current management at low voltages.
**FTD100N10A-VB** is a single-channel N-channel MOSFET in a TO252 package designed for a variety of medium and high voltage applications. The device has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. It uses Trench technology to achieve excellent switching performance and low on-resistance (RDS(ON)), which is 114mΩ at a VGS of 10V. Its low threshold voltage (Vth) of 1.8V enables fast switching and efficient current management at low voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FTD100N10A-VB
- **Package**: TO252
- **Configuration**: Single-channel N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (VGS=10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Model**: FTD100N10A-VB
- **Package**: TO252
- **Configuration**: Single-channel N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (VGS=10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Motor drive control**:
FTD100N10A-VB is suitable for motor drive control modules, especially in applications that require efficient current management and fast switching. It can be used in the control circuit of DC motors to ensure stable drive current under different load conditions.
2. **Switching power supply (SMPS)**:
In a switching power supply, this MOSFET can act as an efficient power switch to help achieve efficient energy conversion. The 100V drain-source voltage makes it suitable for medium-power switching power supplies such as adapters and small power modules, providing reliable current switching capabilities.
3. **DC-DC converter**:
FTD100N10A-VB's low on-resistance and fast switching performance make it an ideal choice in DC-DC converters. It can perform efficient power conversion between different voltage levels and is widely used in portable devices, vehicle power supplies, and industrial power supplies.
4. **Load Switch**:
This MOSFET can be used in load switch applications to efficiently control the flow of current in electronic devices. Its high current handling capability and fast response characteristics make it suitable for a variety of load switch circuits, including battery management systems and protection circuits.
5. **Inverter Circuit**:
In inverter applications, the FTD100N10A-VB can provide reliable switching operation while efficiently converting DC to AC. Its Trench technology ensures low losses in high-frequency applications, suitable for inverter modules in home appliances and solar power generation systems.
1. **Motor drive control**:
FTD100N10A-VB is suitable for motor drive control modules, especially in applications that require efficient current management and fast switching. It can be used in the control circuit of DC motors to ensure stable drive current under different load conditions.
2. **Switching power supply (SMPS)**:
In a switching power supply, this MOSFET can act as an efficient power switch to help achieve efficient energy conversion. The 100V drain-source voltage makes it suitable for medium-power switching power supplies such as adapters and small power modules, providing reliable current switching capabilities.
3. **DC-DC converter**:
FTD100N10A-VB's low on-resistance and fast switching performance make it an ideal choice in DC-DC converters. It can perform efficient power conversion between different voltage levels and is widely used in portable devices, vehicle power supplies, and industrial power supplies.
4. **Load Switch**:
This MOSFET can be used in load switch applications to efficiently control the flow of current in electronic devices. Its high current handling capability and fast response characteristics make it suitable for a variety of load switch circuits, including battery management systems and protection circuits.
5. **Inverter Circuit**:
In inverter applications, the FTD100N10A-VB can provide reliable switching operation while efficiently converting DC to AC. Its Trench technology ensures low losses in high-frequency applications, suitable for inverter modules in home appliances and solar power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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