FTD1001-VB Product details
Product introduction:
**FTD1001-VB** is a dual P-channel MOSFET in a TSSOP8 package, suitable for applications requiring compact design and efficient current control. Each P-channel of the device can withstand a drain-source voltage (V_DS) of up to -30V and a drain current (I_D) of 5.2A, making it suitable for medium and low voltage power management and switching applications. Manufactured using Trench technology, the FTD1001-VB has a lower on-resistance (R_DS(ON)) of 55mΩ at 4.5V gate drive and 36mΩ at 10V gate drive, providing higher efficiency and lower power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
- **Package type**: TSSOP8
- **Configuration**: Dual P channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -5.2A
- **Technology type**: Trench technology
Domain and module applications:
1. **Power management module**:
The dual P-channel configuration of FTD1001-VB makes it ideal for bidirectional switch and load switch applications in power management modules (PMUs). It can be used for control and management of power rails, providing efficient power distribution, and is suitable for portable electronic devices such as mobile phones, tablets, and laptops.
2. **DC-DC converter**:
In DC-DC converters, FTD1001-VB can be used as a synchronous rectifier or switching element. Its low on-resistance and high current handling capability can improve the efficiency of the converter and reduce power loss, making it suitable for power adapters, chargers, and embedded power modules.
3. **Battery protection circuit**:
FTD1001-VB can be used for protection circuits in battery management systems, such as lithium-ion battery protection modules. Its dual P-channel design can quickly cut off the current under overvoltage or overcurrent conditions to protect the battery from damage, and is suitable for battery management systems for electric vehicles, power tools, and smart devices.
4. **Low Voltage Load Switch**:
Due to its excellent low on-resistance and low threshold voltage, FTD1001-VB is also suitable for low voltage load switch applications. In these applications, it can effectively control and switch low voltage loads such as LED drivers, audio amplifiers and control circuits of various home appliances.
In general, FTD1001-VB is a superior dual P-channel MOSFET, which is widely used in power management, DC-DC converters, battery protection circuits and low voltage load switches. Its compact package and efficient current control characteristics make it an ideal choice for portable devices and embedded system designs.
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