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FTD09N20C-VB Product details
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Product Introduction
**FTD09N20C-VB** is an N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and medium current. The device has a maximum drain-source voltage of 200V, a maximum drain current of 10A, and a gate-source voltage of ±20V. The FTD09N20C-VB uses Trench technology to achieve lower on-resistance, with an RDS(ON) of 245mΩ @ VGS=10V, and good switching performance and efficiency. This MOSFET is particularly suitable for applications requiring higher voltage and medium current, such as power management and motor drives.
**FTD09N20C-VB** is an N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and medium current. The device has a maximum drain-source voltage of 200V, a maximum drain current of 10A, and a gate-source voltage of ±20V. The FTD09N20C-VB uses Trench technology to achieve lower on-resistance, with an RDS(ON) of 245mΩ @ VGS=10V, and good switching performance and efficiency. This MOSFET is particularly suitable for applications requiring higher voltage and medium current, such as power management and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**
- With its high voltage withstand capability of 200V and low on-resistance, the FTD09N20C-VB is very suitable for power management modules such as switching power supplies and DC-DC converters. In these applications, it can efficiently convert electrical energy and provide stable power output, especially in the medium power range.
2. **Motor drive**
- In motor drive circuits, the 200V withstand voltage and 10A current handling capability of this MOSFET make it suitable for small and medium-sized motor control. It can provide fast response during motor start and stop, ensuring the stability and efficiency of motor operation, so it is suitable for motor drive modules in industrial automation equipment.
3. **Lighting system**
- The FTD09N20C-VB can also be used in control modules of high-voltage lighting systems, such as LED drivers and HID lamp controls. Its high withstand voltage characteristics and low on-resistance enable it to provide stable lighting control in high-voltage environments, ensuring efficient operation of lighting systems.
4. **Inverter**
- This MOSFET performs well in inverter applications, especially where high voltage and efficient energy conversion are required. It can help inverters achieve efficient AC power conversion and is suitable for devices such as solar inverters and UPS uninterruptible power supplies.
In summary, the FTD09N20C-VB is suitable for power management, motor drives, lighting systems, and inverters, and can provide reliable high-voltage switching and current control in these applications.
1. **Power management**
- With its high voltage withstand capability of 200V and low on-resistance, the FTD09N20C-VB is very suitable for power management modules such as switching power supplies and DC-DC converters. In these applications, it can efficiently convert electrical energy and provide stable power output, especially in the medium power range.
2. **Motor drive**
- In motor drive circuits, the 200V withstand voltage and 10A current handling capability of this MOSFET make it suitable for small and medium-sized motor control. It can provide fast response during motor start and stop, ensuring the stability and efficiency of motor operation, so it is suitable for motor drive modules in industrial automation equipment.
3. **Lighting system**
- The FTD09N20C-VB can also be used in control modules of high-voltage lighting systems, such as LED drivers and HID lamp controls. Its high withstand voltage characteristics and low on-resistance enable it to provide stable lighting control in high-voltage environments, ensuring efficient operation of lighting systems.
4. **Inverter**
- This MOSFET performs well in inverter applications, especially where high voltage and efficient energy conversion are required. It can help inverters achieve efficient AC power conversion and is suitable for devices such as solar inverters and UPS uninterruptible power supplies.
In summary, the FTD09N20C-VB is suitable for power management, motor drives, lighting systems, and inverters, and can provide reliable high-voltage switching and current control in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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