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FTD05N50D-VB Product details
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Product Introduction
**FTD05N50D-VB** is a high voltage N-Channel MOSFET in TO252 package with 650V drain-source voltage withstand capability and 5A maximum drain current capability. The device adopts SJ_Multi-EPI technology, which can provide low conduction loss and high-efficiency current handling capability, and is very suitable for high voltage and high power applications such as power management, power conversion and high voltage switching.
**FTD05N50D-VB** is a high voltage N-Channel MOSFET in TO252 package with 650V drain-source voltage withstand capability and 5A maximum drain current capability. The device adopts SJ_Multi-EPI technology, which can provide low conduction loss and high-efficiency current handling capability, and is very suitable for high voltage and high power applications such as power management, power conversion and high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FTD05N50D-VB
- **Package**: TO252
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: FTD05N50D-VB
- **Package**: TO252
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
**FTD05N50D-VB** Due to its high voltage and low on-resistance, it is suitable for a variety of high voltage applications, including but not limited to the following areas:
1. **High Voltage Switching Circuit**:
In high voltage switching circuits, the FTD05N50D-VB can be used to control the switching operation of high voltage equipment. Its high voltage withstand of 650V enables it to withstand transient overvoltages in high voltage environments and provide stable switching performance, suitable for industrial power control and motor drive circuits.
2. **Power Converter**:
This MOSFET can be used as the main switching element in AC-DC and DC-DC converters to help achieve efficient power conversion. The low RDS(ON) of the FTD05N50D-VB ensures low conduction losses, which helps to improve the overall efficiency of the converter.
3. **Power Management System**:
In power management systems, the FTD05N50D-VB can be used to achieve voltage regulation and current control of high-voltage power supplies. Its high voltage and current capabilities make it excellent in handling power distribution for high-power devices, such as UPS systems and battery management systems.
4. **Industrial Automation Equipment**:
The FTD05N50D-VB can be widely used in industrial automation equipment to drive motors and control various high-power mechanical equipment. Its high voltage and high current handling capabilities can meet the requirements of industrial-grade equipment for stability and durability.
5. **Solar Inverter**:
In solar inverters, this MOSFET can be used as a key switching element responsible for converting DC power to AC power. Its high voltage characteristics can handle the high voltage input in the inverter and provide efficient energy conversion.
**FTD05N50D-VB** is an excellent high voltage MOSFET suitable for a variety of applications such as high voltage switching, power conversion, power management and industrial automation. Its SJ_Multi-EPI technology ensures reliability and efficiency in high voltage and high power environments.
**FTD05N50D-VB** Due to its high voltage and low on-resistance, it is suitable for a variety of high voltage applications, including but not limited to the following areas:
1. **High Voltage Switching Circuit**:
In high voltage switching circuits, the FTD05N50D-VB can be used to control the switching operation of high voltage equipment. Its high voltage withstand of 650V enables it to withstand transient overvoltages in high voltage environments and provide stable switching performance, suitable for industrial power control and motor drive circuits.
2. **Power Converter**:
This MOSFET can be used as the main switching element in AC-DC and DC-DC converters to help achieve efficient power conversion. The low RDS(ON) of the FTD05N50D-VB ensures low conduction losses, which helps to improve the overall efficiency of the converter.
3. **Power Management System**:
In power management systems, the FTD05N50D-VB can be used to achieve voltage regulation and current control of high-voltage power supplies. Its high voltage and current capabilities make it excellent in handling power distribution for high-power devices, such as UPS systems and battery management systems.
4. **Industrial Automation Equipment**:
The FTD05N50D-VB can be widely used in industrial automation equipment to drive motors and control various high-power mechanical equipment. Its high voltage and high current handling capabilities can meet the requirements of industrial-grade equipment for stability and durability.
5. **Solar Inverter**:
In solar inverters, this MOSFET can be used as a key switching element responsible for converting DC power to AC power. Its high voltage characteristics can handle the high voltage input in the inverter and provide efficient energy conversion.
**FTD05N50D-VB** is an excellent high voltage MOSFET suitable for a variety of applications such as high voltage switching, power conversion, power management and industrial automation. Its SJ_Multi-EPI technology ensures reliability and efficiency in high voltage and high power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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