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FSS804-TL-E-VB Product details

Product introduction:

FSS804-TL-E-VB Product Introduction

FSS804-TL-E-VB is a high-performance N-Channel MOSFET in SOP8 package, designed for low voltage applications. It utilizes Trench technology to provide high switching speed and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the operating range of the gate-source voltage (VGS) is ±20V. The gate threshold voltage (Vth) is 1.7V, allowing stable switching at lower gate drive voltages. Its on-resistance (RDS(ON)) is 11mΩ at VGS of 4.5V and 8mΩ at VGS of 10V, capable of supporting a maximum drain current of 13A. FSS804-TL-E-VB is suitable for high-efficiency switching applications, especially in scenarios requiring low on-resistance and high current handling capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: FSS804-TL-E-VB
- **Package**: SOP8
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench

Domain and module applications:

Applications and modules

The low on-resistance and high current capability of FSS804-TL-E-VB enable it to excel in the following areas and modules:

1. **Power management system**: In power management circuits, such as DC-DC converters and power switches, FSS804-TL-E-VB provides efficient switching performance. Its low on-resistance helps reduce power consumption and improve power conversion efficiency, making it very suitable for power management systems that require high efficiency.

2. **Battery protection circuit**: In battery protection circuits, FSS804-TL-E-VB can be used as a switching element to provide protection for the battery. Its high switching speed and low on-resistance effectively protect the battery from overcurrent and overvoltage, helping to extend battery life.

3. **Motor drive**: In motor drive applications, such as stepper motor or brushless motor control, FSS804-TL-E-VB can handle high current and maintain low on-resistance, thereby improving the operating efficiency and performance of the motor, and is suitable for the switching and driving functions of the motor control circuit.

4. **Consumer electronics**: In consumer electronics such as smartphones and tablets, FSS804-TL-E-VB can be used for power management and switch control. Its compact SOP8 package is suitable for space-constrained designs and provides efficient battery management and power control solutions.

5. **Load switch**: In load switch applications, FSS804-TL-E-VB provides reliable switch control capabilities and can handle high current loads. Its low on-resistance helps reduce power consumption and is suitable for load switch scenarios that require high switching speeds and low power consumption.

In summary, FSS804-TL-E-VB MOSFET can play an important role in various high-efficiency electronic applications due to its high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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