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FSL4310Z TO262-VB Product details
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FSL4310Z TO262-VB Product Introduction
The FSL4310Z TO262-VB is a high-efficiency N-Channel MOSFET in a TO262 package. This device utilizes advanced Trench technology to provide extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and the operating range of the gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 2.5V, which enables startup at a lower gate drive voltage. The on-resistance (RDS(ON)) of the FSL4310Z is 10mΩ at VGS of 4.5V and 9mΩ at VGS of 10V, and the maximum drain current (ID) is 100A. Due to its low on-resistance and high current handling capability, the device is suitable for high efficiency and high power density applications.
The FSL4310Z TO262-VB is a high-efficiency N-Channel MOSFET in a TO262 package. This device utilizes advanced Trench technology to provide extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and the operating range of the gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 2.5V, which enables startup at a lower gate drive voltage. The on-resistance (RDS(ON)) of the FSL4310Z is 10mΩ at VGS of 4.5V and 9mΩ at VGS of 10V, and the maximum drain current (ID) is 100A. Due to its low on-resistance and high current handling capability, the device is suitable for high efficiency and high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: FSL4310Z TO262-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: FSL4310Z TO262-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
FSL4310Z TO262-VB MOSFET is suitable for multiple applications and modules due to its excellent performance:
1. **Power Management and Converters**: In power management systems such as DC-DC converters and AC-DC adapters, the low on-resistance of this MOSFET enables it to improve power conversion efficiency, reduce power consumption, and meet the requirements of high efficiency and low heat loss.
2. **Electric Vehicle (EV) Systems**: FSL4310Z is ideal for battery management systems and power drive modules in electric vehicles. Its high current capability and low on-resistance characteristics can withstand the high current requirements inside the vehicle, ensuring stable and efficient operation of the power system.
3. **Motor Drive and Control**: In motor drive applications such as industrial automation equipment and home appliances, the device can provide reliable current control and efficient energy transfer, improving the performance and efficiency of the motor.
4. **Data Center and Server Power**: FSL4310Z is suitable for high-density power management modules in data centers and servers. Its low on-resistance and high current capability help reduce heat loss and improve the system's power efficiency, thereby meeting the data center's requirements for low energy consumption and high efficiency.
By applying FSL4310Z TO262-VB MOSFET, the system efficiency and reliability of various high power density applications can be significantly improved.
FSL4310Z TO262-VB MOSFET is suitable for multiple applications and modules due to its excellent performance:
1. **Power Management and Converters**: In power management systems such as DC-DC converters and AC-DC adapters, the low on-resistance of this MOSFET enables it to improve power conversion efficiency, reduce power consumption, and meet the requirements of high efficiency and low heat loss.
2. **Electric Vehicle (EV) Systems**: FSL4310Z is ideal for battery management systems and power drive modules in electric vehicles. Its high current capability and low on-resistance characteristics can withstand the high current requirements inside the vehicle, ensuring stable and efficient operation of the power system.
3. **Motor Drive and Control**: In motor drive applications such as industrial automation equipment and home appliances, the device can provide reliable current control and efficient energy transfer, improving the performance and efficiency of the motor.
4. **Data Center and Server Power**: FSL4310Z is suitable for high-density power management modules in data centers and servers. Its low on-resistance and high current capability help reduce heat loss and improve the system's power efficiency, thereby meeting the data center's requirements for low energy consumption and high efficiency.
By applying FSL4310Z TO262-VB MOSFET, the system efficiency and reliability of various high power density applications can be significantly improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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