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FSL3306-VB TO262 Product details
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FSL3306-VB Product Introduction
FSL3306-VB is a high-performance N-Channel MOSFET in TO262 package. This MOSFET adopts Trench technology and is designed for high current and high switching frequency applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) allows a range of ±20V. The gate threshold voltage (Vth) of FSL3306-VB is 3.5V, and it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 2.8mΩ@VGS=10V, and it supports a maximum drain current (ID) of 210A. FSL3306-VB has extremely low on-resistance and high current handling capability, making it suitable for applications requiring high current and high efficiency.
FSL3306-VB is a high-performance N-Channel MOSFET in TO262 package. This MOSFET adopts Trench technology and is designed for high current and high switching frequency applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) allows a range of ±20V. The gate threshold voltage (Vth) of FSL3306-VB is 3.5V, and it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 2.8mΩ@VGS=10V, and it supports a maximum drain current (ID) of 210A. FSL3306-VB has extremely low on-resistance and high current handling capability, making it suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: FSL3306-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2.8mΩ@VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: FSL3306-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2.8mΩ@VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The high current and low on-resistance characteristics of the FSL3306-VB MOSFET make it suitable for the following areas and modules:
1. **High Current Power Management**: The FSL3306-VB can be used in high current power management systems such as power converters and high power supplies. In these applications, its low on-resistance can significantly reduce power consumption and heat generation, and improve the efficiency and stability of the system.
2. **Electric Vehicle (EV) Drive System**: In the battery management system and motor drive system of electric vehicles, the FSL3306-VB is able to handle high current switching tasks. Its high current handling capability and low on-resistance enable it to cope with the stringent requirements for power and efficiency in electric vehicles.
3. **Industrial Power Control**: In industrial automation and power control applications, the FSL3306-VB can be used in devices such as motor drives and inverters. Its high current capability and low on-resistance enable it to effectively handle industrial-grade loads, improving the performance and reliability of the system.
4. **Servers and Data Centers**: In the power systems of servers and data centers, FSL3306-VB can be used for high current power conversion and distribution. Its excellent conduction performance helps improve power efficiency and reduce system energy loss.
FSL3306-VB MOSFET can meet the needs of various high current and high efficiency applications by providing high current handling capability and low power consumption performance.
The high current and low on-resistance characteristics of the FSL3306-VB MOSFET make it suitable for the following areas and modules:
1. **High Current Power Management**: The FSL3306-VB can be used in high current power management systems such as power converters and high power supplies. In these applications, its low on-resistance can significantly reduce power consumption and heat generation, and improve the efficiency and stability of the system.
2. **Electric Vehicle (EV) Drive System**: In the battery management system and motor drive system of electric vehicles, the FSL3306-VB is able to handle high current switching tasks. Its high current handling capability and low on-resistance enable it to cope with the stringent requirements for power and efficiency in electric vehicles.
3. **Industrial Power Control**: In industrial automation and power control applications, the FSL3306-VB can be used in devices such as motor drives and inverters. Its high current capability and low on-resistance enable it to effectively handle industrial-grade loads, improving the performance and reliability of the system.
4. **Servers and Data Centers**: In the power systems of servers and data centers, FSL3306-VB can be used for high current power conversion and distribution. Its excellent conduction performance helps improve power efficiency and reduce system energy loss.
FSL3306-VB MOSFET can meet the needs of various high current and high efficiency applications by providing high current handling capability and low power consumption performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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