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FS8N60-VB Product details
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FS8N60-VB Product Introduction
FS8N60-VB is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET adopts Plannar technology and has high voltage tolerance and stable performance. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) allowable range is ±30V. The gate threshold voltage (Vth) is 3.5V, which can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FS8N60-VB is 1100mΩ@VGS=10V, and the maximum drain current (ID) supported is 7A. This MOSFET provides reliable switching performance in a high voltage environment and is suitable for a variety of high voltage applications.
FS8N60-VB is a high voltage N-Channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET adopts Plannar technology and has high voltage tolerance and stable performance. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) allowable range is ±30V. The gate threshold voltage (Vth) is 3.5V, which can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FS8N60-VB is 1100mΩ@VGS=10V, and the maximum drain current (ID) supported is 7A. This MOSFET provides reliable switching performance in a high voltage environment and is suitable for a variety of high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FS8N60-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: FS8N60-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
The high voltage and medium current characteristics of the FS8N60-VB MOSFET make it suitable for a variety of fields and modules, including:
1. **High Voltage Switching Power Supply (SMPS)**: In high voltage switching power supplies, the FS8N60-VB can handle voltages up to 650V as the main switching device. Its higher on-resistance is suitable for high voltage power applications that are not particularly demanding on power consumption, such as power adapters and power conversion modules.
2. **Power Converters**: The FS8N60-VB is suitable for power converters and inverters, such as solar inverters and high voltage power modules. It can perform efficient power conversion in high voltage environments and meet the high current and voltage requirements of these applications.
3. **Industrial Motor Control**: In industrial automation and motor drive systems, the FS8N60-VB can handle high voltage and medium current switching tasks. It is suitable for the control and drive of medium-sized motors, providing stable performance and reliable operation.
4. **Power protection and switching**: In high voltage power protection circuits, FS8N60-VB can be used as a switching element to protect the system from high voltage shocks. It can work stably in high voltage protection circuits to ensure the safety and stability of the system.
Through these applications, FS8N60-VB MOSFET can provide stable and reliable performance in high voltage environments and is suitable for various high voltage and medium current electronic systems.
The high voltage and medium current characteristics of the FS8N60-VB MOSFET make it suitable for a variety of fields and modules, including:
1. **High Voltage Switching Power Supply (SMPS)**: In high voltage switching power supplies, the FS8N60-VB can handle voltages up to 650V as the main switching device. Its higher on-resistance is suitable for high voltage power applications that are not particularly demanding on power consumption, such as power adapters and power conversion modules.
2. **Power Converters**: The FS8N60-VB is suitable for power converters and inverters, such as solar inverters and high voltage power modules. It can perform efficient power conversion in high voltage environments and meet the high current and voltage requirements of these applications.
3. **Industrial Motor Control**: In industrial automation and motor drive systems, the FS8N60-VB can handle high voltage and medium current switching tasks. It is suitable for the control and drive of medium-sized motors, providing stable performance and reliable operation.
4. **Power protection and switching**: In high voltage power protection circuits, FS8N60-VB can be used as a switching element to protect the system from high voltage shocks. It can work stably in high voltage protection circuits to ensure the safety and stability of the system.
Through these applications, FS8N60-VB MOSFET can provide stable and reliable performance in high voltage environments and is suitable for various high voltage and medium current electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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