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FS740B-VB Product details
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FS740B-VB Product Introduction
FS740B-VB is a high voltage, high current N-Channel MOSFET in TO220F package. It adopts Plannar technology and is designed for high voltage and high power applications to provide stable performance and reliability. The maximum drain-source voltage (VDS) of this MOSFET is 550V, and the gate-source voltage (VGS) range is ±30V. The gate threshold voltage (Vth) is 3V, which enables it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FS740B-VB is 260mΩ@VGS=10V, and the maximum drain current (ID) supported is 18A. These features enable FS740B-VB to provide high efficiency and stability in high voltage and high current applications.
FS740B-VB is a high voltage, high current N-Channel MOSFET in TO220F package. It adopts Plannar technology and is designed for high voltage and high power applications to provide stable performance and reliability. The maximum drain-source voltage (VDS) of this MOSFET is 550V, and the gate-source voltage (VGS) range is ±30V. The gate threshold voltage (Vth) is 3V, which enables it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FS740B-VB is 260mΩ@VGS=10V, and the maximum drain current (ID) supported is 18A. These features enable FS740B-VB to provide high efficiency and stability in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FS740B-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **Drain-source on-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Model**: FS740B-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **Drain-source on-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
The high voltage and high current handling capabilities of the FS740B-VB MOSFET make it suitable for the following areas and modules:
1. **High Voltage Switching Power Supply**: In a switching power supply (SMPS), the high drain-source voltage and moderate on-resistance of the FS740B-VB make it suitable as the main switching device. It can handle power switching tasks in a high voltage environment, ensuring high efficiency and stability of power conversion.
2. **Power Converters and Inverters**: In power converters and inverters, the FS740B-VB can effectively handle high voltage and high current power conversion tasks. For example, in photovoltaic inverters and high power adapters, this MOSFET can provide reliable performance and efficient power conversion.
3. **Industrial Motor Control**: In industrial motor drive and control systems, the FS740B-VB can stably handle high current and high voltage switching tasks. It is suitable for motor drive control and power conditioning applications, which can improve system reliability and efficiency.
4. **High-voltage power management system**: In high-voltage power management systems, such as UPS systems and high-power power modules, the high voltage and high current capabilities of the FS740B-VB enable it to handle complex power switching tasks, providing stable and efficient power management.
Through these applications, the FS740B-VB MOSFET is able to meet the needs of high voltage and high current environments, providing reliable performance and efficient power control.
The high voltage and high current handling capabilities of the FS740B-VB MOSFET make it suitable for the following areas and modules:
1. **High Voltage Switching Power Supply**: In a switching power supply (SMPS), the high drain-source voltage and moderate on-resistance of the FS740B-VB make it suitable as the main switching device. It can handle power switching tasks in a high voltage environment, ensuring high efficiency and stability of power conversion.
2. **Power Converters and Inverters**: In power converters and inverters, the FS740B-VB can effectively handle high voltage and high current power conversion tasks. For example, in photovoltaic inverters and high power adapters, this MOSFET can provide reliable performance and efficient power conversion.
3. **Industrial Motor Control**: In industrial motor drive and control systems, the FS740B-VB can stably handle high current and high voltage switching tasks. It is suitable for motor drive control and power conditioning applications, which can improve system reliability and efficiency.
4. **High-voltage power management system**: In high-voltage power management systems, such as UPS systems and high-power power modules, the high voltage and high current capabilities of the FS740B-VB enable it to handle complex power switching tasks, providing stable and efficient power management.
Through these applications, the FS740B-VB MOSFET is able to meet the needs of high voltage and high current environments, providing reliable performance and efficient power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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