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FS70VS-2-VB Product details
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FS70VS-2-VB Product Introduction
FS70VS-2-VB is a high-performance N-Channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. This MOSFET uses Trench technology to provide excellent performance and low power consumption in high current environments. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) range is ±20V. The gate threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of FS70VS-2-VB is 23mΩ@VGS=4.5V and 10mΩ@VGS=10V, respectively, and supports a maximum drain current (ID) of 100A. These features make FS70VS-2-VB an excellent performer in applications that require high current and high efficiency.
FS70VS-2-VB is a high-performance N-Channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. This MOSFET uses Trench technology to provide excellent performance and low power consumption in high current environments. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) range is ±20V. The gate threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of FS70VS-2-VB is 23mΩ@VGS=4.5V and 10mΩ@VGS=10V, respectively, and supports a maximum drain current (ID) of 100A. These features make FS70VS-2-VB an excellent performer in applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: FS70VS-2-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: FS70VS-2-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
FS70VS-2-VB MOSFET plays an important role in multiple high current and high efficiency application scenarios, including:
1. **Power switch**: In switch mode power supplies (SMPS) and power management systems, the low on-resistance and high current capability of FS70VS-2-VB make it ideal for use as the main switch device. It can efficiently convert power, reduce power losses, and provide stable performance.
2. **Electric vehicles**: In battery management systems (BMS) and electric drive systems in electric vehicles, FS70VS-2-VB can handle high current and high power requirements. It is suitable for motor control and battery switch control modules to ensure high efficiency and reliability of the system.
3. **Industrial automation**: In industrial automation equipment, the high current handling capability of FS70VS-2-VB makes it an ideal choice. For example, in motor drive control and power regulation applications, it can improve system efficiency and stability.
4. **High Power Supplies**: In high power adapters and uninterruptible power supply (UPS) systems, the FS70VS-2-VB is able to handle high current switching tasks, providing efficient power management and reliable operation.
Through these applications, the high current handling capability, low on-resistance, and high voltage withstand capability of the FS70VS-2-VB MOSFET can meet the needs of a variety of high power electronic systems and equipment.
FS70VS-2-VB MOSFET plays an important role in multiple high current and high efficiency application scenarios, including:
1. **Power switch**: In switch mode power supplies (SMPS) and power management systems, the low on-resistance and high current capability of FS70VS-2-VB make it ideal for use as the main switch device. It can efficiently convert power, reduce power losses, and provide stable performance.
2. **Electric vehicles**: In battery management systems (BMS) and electric drive systems in electric vehicles, FS70VS-2-VB can handle high current and high power requirements. It is suitable for motor control and battery switch control modules to ensure high efficiency and reliability of the system.
3. **Industrial automation**: In industrial automation equipment, the high current handling capability of FS70VS-2-VB makes it an ideal choice. For example, in motor drive control and power regulation applications, it can improve system efficiency and stability.
4. **High Power Supplies**: In high power adapters and uninterruptible power supply (UPS) systems, the FS70VS-2-VB is able to handle high current switching tasks, providing efficient power management and reliable operation.
Through these applications, the high current handling capability, low on-resistance, and high voltage withstand capability of the FS70VS-2-VB MOSFET can meet the needs of a variety of high power electronic systems and equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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