FS70SM-2-A8-VB Product details
Product introduction:
FS70SM-2-A8-VB is a high-performance single-stage N-Channel MOSFET in a TO3P package. This MOSFET has a drain-source voltage (VDS) of 100V, which is suitable for medium voltage applications. Its gate-source voltage (VGS) allows operation in the ±20V range, and the threshold voltage (Vth) is 1.8V, which ensures good switching performance. The on-resistance (RDS(on)) of FS70SM-2-A8-VB is 18mΩ, which performs well at VGS=10V, ensuring low conduction losses and high efficiency. This MOSFET has a maximum drain current (ID) of up to 65A, making it suitable for applications that need to handle high currents. It uses Trench technology to provide efficient switching speed and low on-resistance, suitable for high power and high frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Model**: FS70SM-2-A8-VB
- **Package**: TO3P
- **Configuration**: Single-stage N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 65A
- **Technology**: Trench
Domain and module applications:
1. **High-Efficiency Power Management**:
FS70SM-2-A8-VB is suitable for high-efficiency power management systems such as DC-DC converters and switching power supplies. Due to its low on-resistance and high current handling capability, this MOSFET can effectively reduce energy loss during power conversion and improve system efficiency, and is suitable for switching and regulation functions of power modules.
2. **Motor Driver**:
In motor drive applications, FS70SM-2-A8-VB can be used as a switching element in motor control circuits. Its drain current capability of up to 65A enables it to drive high-power motors and ensures stable performance during starting, running and stopping, making it ideal for DC motor and stepper motor drivers.
3. **Power Amplifier**:
FS70SM-2-A8-VB is suitable for power amplifier circuits, especially where high current and high efficiency are required. Its low on-resistance and high current capability enable it to handle high-power signals and ensure the stability and performance of the power amplifier.
4. **High-power lighting**:
In high-power lighting systems, the FS70SM-2-A8-VB can be used for the control and regulation of lighting loads. Its Trench technology provides efficient switching performance and is capable of handling high-current loads, making it suitable for control applications of LED drivers and other high-power lighting equipment.
These application scenarios demonstrate the wide applicability of the FS70SM-2-A8-VB in high-power and medium-voltage environments, providing efficient and reliable performance for a variety of electronic devices.
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