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FS70SM-06-VB Product details
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Product Introduction
**FS70SM-06-VB** is a high-performance N-Channel MOSFET in TO3P package. It uses advanced Trench technology, with ultra-low on-resistance and extremely high drain current handling capability. Its maximum drain-source voltage is 60V and supports drain currents up to 150A, making it suitable for power management and power control applications that require high current and high efficiency. Designed to handle high power loads while ensuring good thermal stability and switching performance, FS70SM-06-VB is an ideal choice for high power applications.
**FS70SM-06-VB** is a high-performance N-Channel MOSFET in TO3P package. It uses advanced Trench technology, with ultra-low on-resistance and extremely high drain current handling capability. Its maximum drain-source voltage is 60V and supports drain currents up to 150A, making it suitable for power management and power control applications that require high current and high efficiency. Designed to handle high power loads while ensuring good thermal stability and switching performance, FS70SM-06-VB is an ideal choice for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | 5.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: FS70SM-06-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: FS70SM-06-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
**FS70SM-06-VB** MOSFET is suitable for the following areas and modules:
1. **High Current Power Switch**: Due to its extremely low on-resistance and high current handling capability, FS70SM-06-VB is an ideal choice for high current power switches. In switching power supplies, inverters, and high-power power management modules, it can efficiently handle large loads and reduce power losses, improving the overall efficiency of the system.
2. **Motor Drive**: In high current motor drive applications such as industrial motor control, robotic systems, and electric vehicle drive systems, FS70SM-06-VB provides strong current handling capability and stability, suitable for motor starting and high load operation, ensuring smooth and efficient operation of the motor.
3. **Power Regulation and Conversion**: FS70SM-06-VB performs well in power regulation and conversion applications, such as LED light dimmers and high power DC-DC converters. Its low on-resistance can significantly improve power conversion efficiency and reduce power loss, and is suitable for various high-efficiency power control circuits.
4. **High-power protection circuit**: In high-power protection circuits, such as overcurrent protection and short-circuit protection systems, FS70SM-06-VB can effectively protect the circuit from overcurrent damage, and its high current carrying capacity and low on-resistance ensure the stability and reliability of the circuit.
In short, FS70SM-06-VB MOSFET provides excellent current handling capability and low power loss, which is very suitable for high-current, high-power applications, and is a key component in high-efficiency power management and power control systems.
**FS70SM-06-VB** MOSFET is suitable for the following areas and modules:
1. **High Current Power Switch**: Due to its extremely low on-resistance and high current handling capability, FS70SM-06-VB is an ideal choice for high current power switches. In switching power supplies, inverters, and high-power power management modules, it can efficiently handle large loads and reduce power losses, improving the overall efficiency of the system.
2. **Motor Drive**: In high current motor drive applications such as industrial motor control, robotic systems, and electric vehicle drive systems, FS70SM-06-VB provides strong current handling capability and stability, suitable for motor starting and high load operation, ensuring smooth and efficient operation of the motor.
3. **Power Regulation and Conversion**: FS70SM-06-VB performs well in power regulation and conversion applications, such as LED light dimmers and high power DC-DC converters. Its low on-resistance can significantly improve power conversion efficiency and reduce power loss, and is suitable for various high-efficiency power control circuits.
4. **High-power protection circuit**: In high-power protection circuits, such as overcurrent protection and short-circuit protection systems, FS70SM-06-VB can effectively protect the circuit from overcurrent damage, and its high current carrying capacity and low on-resistance ensure the stability and reliability of the circuit.
In short, FS70SM-06-VB MOSFET provides excellent current handling capability and low power loss, which is very suitable for high-current, high-power applications, and is a key component in high-efficiency power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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