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FS70KMJ-06F-VB Product details
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FS70KMJ-06F-VB MOSFET Product Introduction
FS70KMJ-06F-VB is a high performance N-Channel MOSFET in TO220F package, designed for high current and low on-resistance applications. It uses Trench technology to provide excellent switching performance and thermal stability, suitable for a variety of power management and switching applications that require high efficiency and reliability.
FS70KMJ-06F-VB is a high performance N-Channel MOSFET in TO220F package, designed for high current and low on-resistance applications. It uses Trench technology to provide excellent switching performance and thermal stability, suitable for a variety of power management and switching applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **High current power switch**: The low on-resistance and high current carrying capacity of FS70KMJ-06F-VB make it very suitable for high current power switch applications. It can effectively control the switching of current while reducing power consumption and heat loss, improving the overall efficiency of the power system.
2. **Switching power supply (SMPS)**: In the design of switching power supply, FS70KMJ-06F-VB is used as the main switch or synchronous rectifier, which can greatly reduce switching losses and improve system efficiency. Its low RDS(ON) characteristics make it excellent in high-efficiency power conversion.
3. **Motor drive**: In the motor drive module, this MOSFET can effectively control the switching state of the motor and is suitable for high current and high power motor applications. Its high current carrying capacity and low on-resistance help optimize the starting, running and stopping process of the motor.
4. **Automotive Electronics**: FS70KMJ-06F-VB has a wide range of applications in automotive electronic systems, especially battery management and power distribution systems. Its high current and low on-resistance characteristics meet the automotive industry's needs for efficient and reliable switching.
5. **Inverter**: In solar inverters and other high-power inverter applications, this MOSFET can effectively manage high voltage and high current conditions to improve inverter performance and efficiency. Its low RDS(ON) can effectively reduce energy losses and optimize inverter operating efficiency.
These application areas demonstrate the critical role of the FS70KMJ-06F-VB MOSFET in high current and high power environments, especially where efficient switching and high stability are required.
1. **High current power switch**: The low on-resistance and high current carrying capacity of FS70KMJ-06F-VB make it very suitable for high current power switch applications. It can effectively control the switching of current while reducing power consumption and heat loss, improving the overall efficiency of the power system.
2. **Switching power supply (SMPS)**: In the design of switching power supply, FS70KMJ-06F-VB is used as the main switch or synchronous rectifier, which can greatly reduce switching losses and improve system efficiency. Its low RDS(ON) characteristics make it excellent in high-efficiency power conversion.
3. **Motor drive**: In the motor drive module, this MOSFET can effectively control the switching state of the motor and is suitable for high current and high power motor applications. Its high current carrying capacity and low on-resistance help optimize the starting, running and stopping process of the motor.
4. **Automotive Electronics**: FS70KMJ-06F-VB has a wide range of applications in automotive electronic systems, especially battery management and power distribution systems. Its high current and low on-resistance characteristics meet the automotive industry's needs for efficient and reliable switching.
5. **Inverter**: In solar inverters and other high-power inverter applications, this MOSFET can effectively manage high voltage and high current conditions to improve inverter performance and efficiency. Its low RDS(ON) can effectively reduce energy losses and optimize inverter operating efficiency.
These application areas demonstrate the critical role of the FS70KMJ-06F-VB MOSFET in high current and high power environments, especially where efficient switching and high stability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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