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FS630B-VB Product details
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Product Introduction
**FS630B-VB** is a unipolar N-channel MOSFET in TO220F package. Designed for high-efficiency power switching applications, this MOSFET has a maximum drain-source voltage (V_DS) of 200V and a maximum drain current (I_D) of 10A. It supports a gate-source voltage (V_GS) of ±20V and a gate-source threshold voltage (V_th) of 3V, ensuring that it can be turned on at a lower gate voltage. This MOSFET uses trench technology, has low on-resistance and excellent switching performance, and is very suitable for use in various power management and power conversion applications.
**FS630B-VB** is a unipolar N-channel MOSFET in TO220F package. Designed for high-efficiency power switching applications, this MOSFET has a maximum drain-source voltage (V_DS) of 200V and a maximum drain current (I_D) of 10A. It supports a gate-source voltage (V_GS) of ±20V and a gate-source threshold voltage (V_th) of 3V, ensuring that it can be turned on at a lower gate voltage. This MOSFET uses trench technology, has low on-resistance and excellent switching performance, and is very suitable for use in various power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 265 mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 10A
- **Technology type**: Trench technology
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 265 mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 10A
- **Technology type**: Trench technology
Domain and module applications：
Applications and Modules
1. **Power Switch**:
FS630B-VB is suitable for power switching applications, especially in switch mode power supplies (SMPS). In these applications, the 200V drain-source voltage and 10A drain current enable it to handle high voltage and high current loads. Its low on-resistance (265 mΩ) helps reduce switching losses and improve system efficiency.
2. **DC-DC Converter**:
In DC-DC converters, FS630B-VB can be used as an efficient switching element. Its trench technology ensures high switching speed and low on-resistance, allowing the converter to maintain stable performance at high frequency operation. This is critical for applications that require precise voltage regulation, such as portable electronic devices and communication equipment.
3. **Motor Drive**:
FS630B-VB is also suitable for motor drive circuits. It can effectively handle high current loads during motor startup and operation, providing stable switching performance. The low on-resistance of this MOSFET helps reduce power consumption and improve the overall efficiency of the motor drive system under high voltage and high current conditions.
4. **High Efficiency Power Management**:
The low on-resistance and high withstand voltage characteristics of the FS630B-VB make it an ideal choice in a variety of high efficiency power management applications. This includes power regulation, load switching, and power management modules, where efficient power conversion and control are required.
The high switching efficiency and low power consumption characteristics of the FS630B-VB make it widely applicable in a variety of power electronics applications, especially in environments that need to handle high voltages and high currents.
1. **Power Switch**:
FS630B-VB is suitable for power switching applications, especially in switch mode power supplies (SMPS). In these applications, the 200V drain-source voltage and 10A drain current enable it to handle high voltage and high current loads. Its low on-resistance (265 mΩ) helps reduce switching losses and improve system efficiency.
2. **DC-DC Converter**:
In DC-DC converters, FS630B-VB can be used as an efficient switching element. Its trench technology ensures high switching speed and low on-resistance, allowing the converter to maintain stable performance at high frequency operation. This is critical for applications that require precise voltage regulation, such as portable electronic devices and communication equipment.
3. **Motor Drive**:
FS630B-VB is also suitable for motor drive circuits. It can effectively handle high current loads during motor startup and operation, providing stable switching performance. The low on-resistance of this MOSFET helps reduce power consumption and improve the overall efficiency of the motor drive system under high voltage and high current conditions.
4. **High Efficiency Power Management**:
The low on-resistance and high withstand voltage characteristics of the FS630B-VB make it an ideal choice in a variety of high efficiency power management applications. This includes power regulation, load switching, and power management modules, where efficient power conversion and control are required.
The high switching efficiency and low power consumption characteristics of the FS630B-VB make it widely applicable in a variety of power electronics applications, especially in environments that need to handle high voltages and high currents.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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