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FS5SM-18A-VB Product details
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1. FS5SM-18A-VB Product Introduction
FS5SM-18A-VB is a single N-channel power MOSFET in TO247 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V. Using SJ_Multi-EPI technology, FS5SM-18A-VB provides stable performance in high voltage environments. The MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 1500mΩ @ VGS=10V. It can support a drain current (ID) of up to 5A and is suitable for high voltage switching and power management applications.
FS5SM-18A-VB is a single N-channel power MOSFET in TO247 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V. Using SJ_Multi-EPI technology, FS5SM-18A-VB provides stable performance in high voltage environments. The MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 1500mΩ @ VGS=10V. It can support a drain current (ID) of up to 5A and is suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FS5SM-18A-VB Detailed Parameters
1. **Package Type**: TO247
The TO247 package provides excellent heat dissipation and mechanical strength, suitable for high power and high voltage applications.
2. **Configuration**: Single N-channel
The single N-channel structure is suitable for various switch and amplifier applications, easy to design and control.
3. **Drain-Source Voltage (VDS)**: 900V
The MOSFET can withstand drain-source voltages up to 900V, suitable for high voltage environment applications.
4. **Gate-Source Voltage (VGS)**: ±30V
A wide range of gate voltage support to meet various drive circuit requirements.
5. **Threshold Voltage (Vth)**: 3.5V
Higher threshold voltage is suitable for high voltage applications and optimizes the driving performance of the MOSFET.
6. **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
Higher on-resistance may lead to certain conduction losses, but its high voltage capability makes it suitable for high voltage switching applications.
7. **Maximum Drain Current (ID)**: 5A
Able to handle drain currents up to 5A, suitable for medium power high voltage applications.
8. **Technology**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent withstand voltage characteristics and reliability, suitable for high voltage switching applications.
1. **Package Type**: TO247
The TO247 package provides excellent heat dissipation and mechanical strength, suitable for high power and high voltage applications.
2. **Configuration**: Single N-channel
The single N-channel structure is suitable for various switch and amplifier applications, easy to design and control.
3. **Drain-Source Voltage (VDS)**: 900V
The MOSFET can withstand drain-source voltages up to 900V, suitable for high voltage environment applications.
4. **Gate-Source Voltage (VGS)**: ±30V
A wide range of gate voltage support to meet various drive circuit requirements.
5. **Threshold Voltage (Vth)**: 3.5V
Higher threshold voltage is suitable for high voltage applications and optimizes the driving performance of the MOSFET.
6. **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
Higher on-resistance may lead to certain conduction losses, but its high voltage capability makes it suitable for high voltage switching applications.
7. **Maximum Drain Current (ID)**: 5A
Able to handle drain currents up to 5A, suitable for medium power high voltage applications.
8. **Technology**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent withstand voltage characteristics and reliability, suitable for high voltage switching applications.
Domain and module applications：
III. Application fields and module examples of FS5SM-18A-VB
FS5SM-18A-VB MOSFET is suitable for the following fields and modules due to its high voltage capability and stable performance:
1. **High-Voltage Power Switches**:
FS5SM-18A-VB is very suitable for high-voltage switching power supplies, such as high-voltage DC-DC converters and high-voltage AC-DC converters. Its high drain-source voltage capability enables it to stably handle high-voltage switching operations.
2. **Inverters**:
In high-voltage inverter applications, such as solar inverters and electric vehicle inverters, the high withstand voltage characteristics of FS5SM-18A-VB ensure the stability and reliability of the inverter process.
3. **Power Conversion**:
In high voltage power conversion equipment, such as high voltage power adapters and power conditioning devices, the FS5SM-18A-VB can efficiently handle power conversion needs in high voltage environments.
4. **Power Protection**:
This MOSFET is suitable for high voltage power protection circuits, such as overvoltage protection and current protection circuits. Its high withstand voltage capability can provide a reliable power protection solution.
5. **Industrial Equipment**:
FS5SM-18A-VB is suitable for a variety of industrial equipment that requires high voltage switching, such as high voltage control systems and motor drive modules. Its high withstand voltage and stable performance support the high voltage requirements in industrial applications.
These applications demonstrate the wide applicability of the FS5SM-18A-VB in high voltage and high power environments. Despite its higher on-resistance, its excellent voltage withstand performance and stability make it very effective in high-voltage applications.
FS5SM-18A-VB MOSFET is suitable for the following fields and modules due to its high voltage capability and stable performance:
1. **High-Voltage Power Switches**:
FS5SM-18A-VB is very suitable for high-voltage switching power supplies, such as high-voltage DC-DC converters and high-voltage AC-DC converters. Its high drain-source voltage capability enables it to stably handle high-voltage switching operations.
2. **Inverters**:
In high-voltage inverter applications, such as solar inverters and electric vehicle inverters, the high withstand voltage characteristics of FS5SM-18A-VB ensure the stability and reliability of the inverter process.
3. **Power Conversion**:
In high voltage power conversion equipment, such as high voltage power adapters and power conditioning devices, the FS5SM-18A-VB can efficiently handle power conversion needs in high voltage environments.
4. **Power Protection**:
This MOSFET is suitable for high voltage power protection circuits, such as overvoltage protection and current protection circuits. Its high withstand voltage capability can provide a reliable power protection solution.
5. **Industrial Equipment**:
FS5SM-18A-VB is suitable for a variety of industrial equipment that requires high voltage switching, such as high voltage control systems and motor drive modules. Its high withstand voltage and stable performance support the high voltage requirements in industrial applications.
These applications demonstrate the wide applicability of the FS5SM-18A-VB in high voltage and high power environments. Despite its higher on-resistance, its excellent voltage withstand performance and stability make it very effective in high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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