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FS5SM-16A-VB Product details
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1. Product introduction of FS5SM-16A-VB model
FS5SM-16A-VB is a high-voltage single N-channel power MOSFET, which adopts TO3P package and uses advanced SJ_Multi-EPI technology. With a drain-source voltage (VDS) capability of up to 800V, this MOSFET is suitable for handling switching and regulation tasks in high-voltage applications. Its maximum drain current (ID) is 11A, ensuring stable operation at higher voltages. The on-resistance (RDS(ON)) of FS5SM-16A-VB is 500mΩ@VGS=10V, which can effectively reduce power consumption and optimize system efficiency. Its higher threshold voltage (Vth) is 3.5V, providing better switching performance and current control capability.
FS5SM-16A-VB is a high-voltage single N-channel power MOSFET, which adopts TO3P package and uses advanced SJ_Multi-EPI technology. With a drain-source voltage (VDS) capability of up to 800V, this MOSFET is suitable for handling switching and regulation tasks in high-voltage applications. Its maximum drain current (ID) is 11A, ensuring stable operation at higher voltages. The on-resistance (RDS(ON)) of FS5SM-16A-VB is 500mΩ@VGS=10V, which can effectively reduce power consumption and optimize system efficiency. Its higher threshold voltage (Vth) is 3.5V, providing better switching performance and current control capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FS5SM-16A-VB model
1. **Package type**: TO3P
- Provides excellent heat dissipation performance and is suitable for high-power applications.
2. **Configuration**: Single N-channel
- Suitable for high-voltage processing in switching and amplification applications.
3. **Drain-source voltage (VDS)**: 800V
- High voltage capability makes it suitable for high-voltage power systems and switching applications.
4. **Gate voltage (VGS)**: ±30V
- Supports a wide range of gate voltages, increasing design flexibility and compatibility.
5. **Threshold voltage (Vth)**: 3.5V
- Higher threshold voltage ensures that the MOSFET is effectively turned on at a specific gate voltage with good stability.
6. **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- Low on-resistance at 10V gate voltage helps reduce power consumption and improve efficiency.
7. **Maximum continuous drain current (ID)**: 11A
- Supports medium current loads for medium to high power applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves MOSFET performance and reliability in high voltage applications.
1. **Package type**: TO3P
- Provides excellent heat dissipation performance and is suitable for high-power applications.
2. **Configuration**: Single N-channel
- Suitable for high-voltage processing in switching and amplification applications.
3. **Drain-source voltage (VDS)**: 800V
- High voltage capability makes it suitable for high-voltage power systems and switching applications.
4. **Gate voltage (VGS)**: ±30V
- Supports a wide range of gate voltages, increasing design flexibility and compatibility.
5. **Threshold voltage (Vth)**: 3.5V
- Higher threshold voltage ensures that the MOSFET is effectively turned on at a specific gate voltage with good stability.
6. **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- Low on-resistance at 10V gate voltage helps reduce power consumption and improve efficiency.
7. **Maximum continuous drain current (ID)**: 11A
- Supports medium current loads for medium to high power applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves MOSFET performance and reliability in high voltage applications.
Domain and module applications：
3. Application fields and modules of FS5SM-16A-VB
FS5SM-16A-VB is suitable for the following fields and modules due to its high voltage handling capability and good conductivity:
1. **High voltage power supply system**:
- In high voltage power supply system, FS5SM-16A-VB can handle voltage up to 800V, suitable for high voltage DC-DC converters and AC-DC power supply modules, ensuring stable power conversion and efficient system operation.
2. **Power conversion equipment**:
- This MOSFET is suitable for power conversion equipment such as inverters and power conditioning modules, which can work stably in high voltage environment and provide reliable current control and switching functions.
3. **Industrial electrical control**:
- In industrial electrical control systems, FS5SM-16A-VB can be used in high voltage switching and control circuits, supporting medium to high power loads, ensuring high efficiency and stability of industrial equipment.
4. **Automotive Electrical Systems**:
- Suitable for automotive high voltage applications such as high voltage battery management systems and electric vehicle drive control, providing stable high voltage switching capabilities.
5. **Energy Conversion Systems**:
- In renewable energy systems such as solar inverters and wind power generation systems, the FS5SM-16A-VB is able to handle high voltage inputs, optimizing energy conversion and system efficiency.
These application scenarios demonstrate the wide applicability of the FS5SM-16A-VB in situations requiring high voltage handling and medium current loads.
FS5SM-16A-VB is suitable for the following fields and modules due to its high voltage handling capability and good conductivity:
1. **High voltage power supply system**:
- In high voltage power supply system, FS5SM-16A-VB can handle voltage up to 800V, suitable for high voltage DC-DC converters and AC-DC power supply modules, ensuring stable power conversion and efficient system operation.
2. **Power conversion equipment**:
- This MOSFET is suitable for power conversion equipment such as inverters and power conditioning modules, which can work stably in high voltage environment and provide reliable current control and switching functions.
3. **Industrial electrical control**:
- In industrial electrical control systems, FS5SM-16A-VB can be used in high voltage switching and control circuits, supporting medium to high power loads, ensuring high efficiency and stability of industrial equipment.
4. **Automotive Electrical Systems**:
- Suitable for automotive high voltage applications such as high voltage battery management systems and electric vehicle drive control, providing stable high voltage switching capabilities.
5. **Energy Conversion Systems**:
- In renewable energy systems such as solar inverters and wind power generation systems, the FS5SM-16A-VB is able to handle high voltage inputs, optimizing energy conversion and system efficiency.
These application scenarios demonstrate the wide applicability of the FS5SM-16A-VB in situations requiring high voltage handling and medium current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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