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FS5ASJ-O6F-VB Product details
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1. Product introduction of FS5ASJ-O6F-VB model
FS5ASJ-O6F-VB is a high-performance single N-channel power MOSFET packaged in TO252 and manufactured using advanced Trench technology. The MOSFET is capable of operating at a drain-source voltage (VDS) of up to 60V and supports a maximum drain current (ID) of 18A. Its low on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at 10V, which ensures excellent conductivity and low power consumption under various operating conditions. The threshold voltage (Vth) of FS5ASJ-O6F-VB is 1.7V, enabling it to be effectively turned on at a lower gate voltage, making it suitable for a variety of high-efficiency switching and control applications.
FS5ASJ-O6F-VB is a high-performance single N-channel power MOSFET packaged in TO252 and manufactured using advanced Trench technology. The MOSFET is capable of operating at a drain-source voltage (VDS) of up to 60V and supports a maximum drain current (ID) of 18A. Its low on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at 10V, which ensures excellent conductivity and low power consumption under various operating conditions. The threshold voltage (Vth) of FS5ASJ-O6F-VB is 1.7V, enabling it to be effectively turned on at a lower gate voltage, making it suitable for a variety of high-efficiency switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of FS5ASJ-O6F-VB model
1. **Package type**: TO252
- Provides good heat dissipation performance and is suitable for medium power applications.
2. **Configuration**: Single N-channel
- Suitable for high-efficiency switching and amplification applications.
3. **Drain-source voltage (VDS)**: 60V
- Suitable for medium voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- Supports a wide range of gate voltages to adapt to various driving requirements.
5. **Threshold voltage (Vth)**: 1.7V
- The lower threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **85mΩ@VGS=4.5V**: Provides reasonable on-resistance at lower gate voltage, suitable for low gate drive applications.
- **73mΩ@VGS=10V**: Further reduces on-resistance at higher gate voltage, optimizing power loss.
7. **Maximum continuous drain current (ID)**: 18A
- Supports medium current load, suitable for medium power applications.
8. **Technology**: Trench
- Trench technology improves the switching speed and conductivity of MOSFET, reducing power consumption.
1. **Package type**: TO252
- Provides good heat dissipation performance and is suitable for medium power applications.
2. **Configuration**: Single N-channel
- Suitable for high-efficiency switching and amplification applications.
3. **Drain-source voltage (VDS)**: 60V
- Suitable for medium voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- Supports a wide range of gate voltages to adapt to various driving requirements.
5. **Threshold voltage (Vth)**: 1.7V
- The lower threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **85mΩ@VGS=4.5V**: Provides reasonable on-resistance at lower gate voltage, suitable for low gate drive applications.
- **73mΩ@VGS=10V**: Further reduces on-resistance at higher gate voltage, optimizing power loss.
7. **Maximum continuous drain current (ID)**: 18A
- Supports medium current load, suitable for medium power applications.
8. **Technology**: Trench
- Trench technology improves the switching speed and conductivity of MOSFET, reducing power consumption.
Domain and module applications：
III. Application fields and modules of FS5ASJ-O6F-VB
FS5ASJ-O6F-VB excels in the following fields and modules:
1. **Power management system**:
- In power management modules, FS5ASJ-O6F-VB can be used in DC-DC converters and power switches, providing efficient power conversion and low power operation, suitable for battery-powered portable devices and computer power systems.
2. **Power tools**:
- This MOSFET is suitable for the motor drive circuit of power tools, capable of handling high current loads and providing stable switching control, enhancing the performance and response speed of the tools.
3. **Automotive electronics**:
- In automotive electronic systems, such as LED light control and battery management systems, FS5ASJ-O6F-VB provides high efficiency and low power consumption to ensure reliable operation of the system.
4. **Industrial Equipment**:
- Power switches and control modules for industrial equipment, such as motor drivers and power management systems, support medium power loads and high-efficiency switching operations.
5. **Home Appliances**:
- In home appliances, FS5ASJ-O6F-VB can be used for high-efficiency power switching and control applications to improve the energy efficiency and stability of the equipment.
These application examples demonstrate the wide applicability of FS5ASJ-O6F-VB in high-efficiency power management, switch control and medium current demand occasions.
FS5ASJ-O6F-VB excels in the following fields and modules:
1. **Power management system**:
- In power management modules, FS5ASJ-O6F-VB can be used in DC-DC converters and power switches, providing efficient power conversion and low power operation, suitable for battery-powered portable devices and computer power systems.
2. **Power tools**:
- This MOSFET is suitable for the motor drive circuit of power tools, capable of handling high current loads and providing stable switching control, enhancing the performance and response speed of the tools.
3. **Automotive electronics**:
- In automotive electronic systems, such as LED light control and battery management systems, FS5ASJ-O6F-VB provides high efficiency and low power consumption to ensure reliable operation of the system.
4. **Industrial Equipment**:
- Power switches and control modules for industrial equipment, such as motor drivers and power management systems, support medium power loads and high-efficiency switching operations.
5. **Home Appliances**:
- In home appliances, FS5ASJ-O6F-VB can be used for high-efficiency power switching and control applications to improve the energy efficiency and stability of the equipment.
These application examples demonstrate the wide applicability of FS5ASJ-O6F-VB in high-efficiency power management, switch control and medium current demand occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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