FS5ASJ-06F-T13-VB Product details
Product introduction:
FS5ASJ-06F-T13-VB is a high-performance unipolar N-channel MOSFET packaged in a TO252 package, designed for medium voltage and medium current applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium voltage power management. The on-resistance (RDS(ON)) of FS5ASJ-06F-T13-VB is 85mΩ (at VGS of 4.5V) and 73mΩ at a higher gate voltage (10V), providing good current control performance. It supports a continuous drain current (ID) of 18A, suitable for medium current applications. The MOSFET uses Trench technology to optimize switching performance and thermal management.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 18A
- **Technology**: Trench
- **Gate charge (Qg)**: Low, supports fast switching
- **Junction temperature (Tj)**: Suitable for high temperature environment
Domain and module applications:
FS5ASJ-06F-T13-VB MOSFET has a wide range of applications in multiple fields and modules, including:
1. **Power Management**: FS5ASJ-06F-T13-VB is suitable for various power management applications, such as DC-DC converters and power switching power supplies. Its low on-resistance and moderate current handling capability make it very suitable for efficient power conversion and voltage regulation.
2. **Motor Control**: In motor drive circuits, FS5ASJ-06F-T13-VB is able to provide stable current control and is suitable for medium power motor control systems. Its efficient switching performance and moderate current capability ensure smooth operation of the motor.
3. **LED Drive**: This MOSFET can be used in LED drive circuits, especially in applications that require efficient switching and current control. The low RDS(ON) of FS5ASJ-06F-T13-VB helps improve the efficiency of LED drive systems and reduce power consumption.
4. **Automotive electronics**: In automotive electronics, such as on-board power management and control systems, the medium current handling capability and high temperature resistance of the FS5ASJ-06F-T13-VB make it suitable for applications in automotive environments.
5. **Battery protection**: In battery management systems, the FS5ASJ-06F-T13-VB can be used in battery protection circuits to prevent overcurrent and overvoltage. Its stable on-resistance and high current capability support safe and reliable battery protection.
The medium voltage and current capability, low on-resistance, and Trench technology of the FS5ASJ-06F-T13-VB MOSFET make it excel in a variety of applications and are suitable for medium power applications that require efficient current control and thermal management.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image