FS5615-VB Product details
Product introduction:
FS5615-VB is a high-voltage single N-channel MOSFET in TO263 package, designed for high-power and high-voltage applications. With a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, the device is able to operate stably under high voltage conditions. FS5615-VB adopts advanced trench technology with an on-resistance (RDS(ON)) of 35mΩ@VGS=10V, ensuring efficient current transmission with low power consumption. Its rated current is 45A, making it an excellent performer in high-current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage**: 150V
- **Gate-source voltage**: ±20V
- **Threshold voltage**: 3V
- **On-resistance**: 35mΩ@VGS=10V
- **Rated current**: 45A
- **Technology type**: Trench
Domain and module applications:
FS5615-VB MOSFET performs well in a variety of high-voltage and high-power applications. For example, in a **switching power supply (SMPS)**, it can effectively control the power switch state, improve power efficiency, and handle higher voltages and currents. In the battery management system of **electric vehicles (EVs)**, FS5615-VB can manage the battery charging and discharging process to ensure stability and safety in high-voltage environments. In addition, in **industrial power management**, this MOSFET can be used as a switching component for high-voltage power supplies, optimizing the overall performance of the power supply and ensuring reliable operation of the equipment under high load conditions. Its high voltage resistance and high current handling capabilities make it an ideal choice for these applications.
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