FS540A-VB Product details
Product introduction:
FS540A-VB is a high-performance single N-channel power MOSFET in TO220F package, combined with Trench technology to improve switching efficiency and reduce conduction loss. The design features of this MOSFET make it suitable for medium and high voltage applications. Its drain-source voltage (VDS) is 100V, supports a maximum drain current (ID) of 50A, and its on-resistance (RDS(ON)) is 34mΩ when the gate voltage is 10V. These characteristics make FS540A-VB perform well in electronic devices that require high power and high efficiency, especially in situations where low conduction loss and stable performance are required.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type**: TO220F
- With good heat dissipation performance, suitable for medium to high power applications.
2. **Configuration**: Single N-channel
- Suitable for various switching and amplification applications.
3. **Drain-source voltage (VDS)**: 100V
- Suitable for medium and high voltage power supply systems, supporting a wide range of voltage applications.
4. **Gate voltage (VGS)**: ±20V
- Provides a wide operating voltage range, increasing design flexibility.
5. **Threshold voltage (Vth)**: 1.8V
- The low threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 34mΩ@VGS=10V
- Low on-resistance at 10V gate voltage helps reduce power consumption and improve efficiency.
7. **Maximum continuous drain current (ID)**: 50A
- Supports high current loads for high-power applications.
8. **Technology**: Trench
- Trench technology improves switching speed and conductivity, reducing power consumption.
Domain and module applications:
FS540A-VB is suitable for the following fields and modules due to its excellent electrical performance and high power handling capability:
1. **Power converter**:
- In DC-DC converters and AC-DC power modules, FS540A-VB can provide efficient power conversion, optimize energy utilization and reduce losses.
2. **Motor driver**:
- This MOSFET is suitable for motor drive applications, capable of handling high current and providing stable current supply, enhancing the performance and response speed of the motor.
3. **Battery management system**:
- In battery management systems, the low on-resistance of FS540A-VB helps improve battery charging and discharging efficiency and ensure stable operation of the system.
4. **Automotive electronics**:
- Suitable for power regulation and control circuits in automotive electronic systems, such as LED lighting and motor control modules, providing high efficiency and reliable performance.
5. **Industrial Power**:
- In industrial power modules, FS540A-VB can be used for power switching and current regulation to meet the needs of high power and high efficiency.
These application examples show the wide applicability of FS540A-VB in situations requiring high efficiency, current handling capability and stable performance.
Technical support:
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