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FS523-VB Product details
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FS523-VB MOSFET Product Introduction
FS523-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high power and high efficiency applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can operate stably over a wide range of operating voltages. FS523-VB uses advanced trench technology to achieve a low on-resistance (RDS(ON)@VGS=10V) of 27mΩ, which improves the efficiency when current passes through. The device is rated at 45A and is suitable for applications that require high current handling, ensuring reliable power transmission and management.
FS523-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high power and high efficiency applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can operate stably over a wide range of operating voltages. FS523-VB uses advanced trench technology to achieve a low on-resistance (RDS(ON)@VGS=10V) of 27mΩ, which improves the efficiency when current passes through. The device is rated at 45A and is suitable for applications that require high current handling, ensuring reliable power transmission and management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ@VGS=10V
- **Rated current (ID)**: 45A
- **Technology type**: Trench
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ@VGS=10V
- **Rated current (ID)**: 45A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
FS523-VB MOSFET is widely used in various high-power electronic devices. For example, in **power converters**, it can efficiently control the switching state of current and improve the efficiency and stability of power conversion. In **motor drive control systems**, FS523-VB can be used to adjust the drive current of the motor, optimize motor performance, and enhance response speed. In addition, it is also suitable for **industrial power management**, such as in voltage-stabilized power supplies and overcurrent protection circuits to ensure the safe operation of industrial equipment. Low on-resistance and high current handling capabilities make it an ideal choice for these applications.
FS523-VB MOSFET is widely used in various high-power electronic devices. For example, in **power converters**, it can efficiently control the switching state of current and improve the efficiency and stability of power conversion. In **motor drive control systems**, FS523-VB can be used to adjust the drive current of the motor, optimize motor performance, and enhance response speed. In addition, it is also suitable for **industrial power management**, such as in voltage-stabilized power supplies and overcurrent protection circuits to ensure the safe operation of industrial equipment. Low on-resistance and high current handling capabilities make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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