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FS50VSJ-06-VB Product details
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1. FS50VSJ-06-VB Product Introduction
FS50VSJ-06-VB is a single N-channel power MOSFET in TO263 package. This MOSFET is designed for high-efficiency power switching applications with high current capability and low on-resistance. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium and low voltage scenarios. With low threshold voltage (Vth) and excellent on-resistance (RDS(ON)), FS50VSJ-06-VB can provide up to 75A of continuous drain current (ID), which is suitable for high-power and high-efficiency power management systems.
FS50VSJ-06-VB is a single N-channel power MOSFET in TO263 package. This MOSFET is designed for high-efficiency power switching applications with high current capability and low on-resistance. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium and low voltage scenarios. With low threshold voltage (Vth) and excellent on-resistance (RDS(ON)), FS50VSJ-06-VB can provide up to 75A of continuous drain current (ID), which is suitable for high-power and high-efficiency power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. FS50VSJ-06-VB Detailed parameter description
1. **Package type**: TO263
TO263 package provides good thermal performance and miniaturized design, suitable for high-density electronic devices.
2. **Configuration**: Single N-channel
Suitable for switch and amplifier applications, simplifying drive and control design.
3. **Drain-source voltage (VDS)**: 60V
Able to withstand drain-source voltage up to 60V, suitable for medium and low voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports a larger gate voltage range, increasing design flexibility.
5. **Threshold voltage (Vth)**: 1.7V
The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, reducing drive power consumption.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
Low on-resistance significantly reduces conduction losses and improves overall efficiency.
7. **Maximum drain current (ID)**: 75A
Provides up to 75A of continuous drain current, suitable for high current applications.
8. **Technology**: Trench
Trench technology optimizes current density and on-resistance, improving overall performance.
1. **Package type**: TO263
TO263 package provides good thermal performance and miniaturized design, suitable for high-density electronic devices.
2. **Configuration**: Single N-channel
Suitable for switch and amplifier applications, simplifying drive and control design.
3. **Drain-source voltage (VDS)**: 60V
Able to withstand drain-source voltage up to 60V, suitable for medium and low voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports a larger gate voltage range, increasing design flexibility.
5. **Threshold voltage (Vth)**: 1.7V
The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, reducing drive power consumption.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
Low on-resistance significantly reduces conduction losses and improves overall efficiency.
7. **Maximum drain current (ID)**: 75A
Provides up to 75A of continuous drain current, suitable for high current applications.
8. **Technology**: Trench
Trench technology optimizes current density and on-resistance, improving overall performance.
Domain and module applications：
III. Application fields and module examples of FS50VSJ-06-VB
FS50VSJ-06-VB MOSFET is suitable for multiple application fields that require high power handling and high efficiency:
1. **Power Management Systems**:
In power management systems, FS50VSJ-06-VB is widely used in DC-DC converters and switching power supplies. Its low on-resistance and high current capability can effectively improve conversion efficiency and ensure the stability of power output.
2. **Motor Control**:
In motor control applications, such as power tools, electric vehicles, etc., FS50VSJ-06-VB's high current handling capability and low conduction loss make it an ideal choice for controlling motor drives, ensuring efficient operation of the system.
3. **Solar Inverters**:
In solar inverters, the high efficiency and low on-resistance of FS50VSJ-06-VB make it suitable for the energy conversion process of solar panels, improving the overall efficiency and reliability of the inverter.
4. **Automotive Electronics**:
FS50VSJ-06-VB can also be used in automotive electronic applications such as power windows, fan control and other power management modules. Its high current capability and stable performance can support the efficient operation of various auxiliary systems in the car.
5. **Computer Power Supplies**:
In computer power supply systems, FS50VSJ-06-VB can be used for efficient power conversion and management, improving the overall efficiency and performance of the power supply through its excellent on-resistance and current handling capabilities.
The high current and low on-resistance characteristics of this MOSFET make it suitable for use in a variety of high-efficiency and high-power electronic devices.
FS50VSJ-06-VB MOSFET is suitable for multiple application fields that require high power handling and high efficiency:
1. **Power Management Systems**:
In power management systems, FS50VSJ-06-VB is widely used in DC-DC converters and switching power supplies. Its low on-resistance and high current capability can effectively improve conversion efficiency and ensure the stability of power output.
2. **Motor Control**:
In motor control applications, such as power tools, electric vehicles, etc., FS50VSJ-06-VB's high current handling capability and low conduction loss make it an ideal choice for controlling motor drives, ensuring efficient operation of the system.
3. **Solar Inverters**:
In solar inverters, the high efficiency and low on-resistance of FS50VSJ-06-VB make it suitable for the energy conversion process of solar panels, improving the overall efficiency and reliability of the inverter.
4. **Automotive Electronics**:
FS50VSJ-06-VB can also be used in automotive electronic applications such as power windows, fan control and other power management modules. Its high current capability and stable performance can support the efficient operation of various auxiliary systems in the car.
5. **Computer Power Supplies**:
In computer power supply systems, FS50VSJ-06-VB can be used for efficient power conversion and management, improving the overall efficiency and performance of the power supply through its excellent on-resistance and current handling capabilities.
The high current and low on-resistance characteristics of this MOSFET make it suitable for use in a variety of high-efficiency and high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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