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FS50VSJ-03-VB Product details
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1. Product Introduction of FS50VSJ-03-VB Model
FS50VSJ-03-VB is a high-performance single N-channel power MOSFET packaged in a TO263 package using Trench technology. This MOSFET is designed to provide superior switching performance and low on-resistance, making it suitable for high-efficiency power management applications. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A, the FS50VSJ-03-VB exhibits an on-resistance of 18mΩ and 12mΩ at different gate voltages (4.5V and 10V), respectively, ensuring efficient power transmission in a variety of applications. Its low threshold voltage (Vth) of 1.7V further optimizes switching efficiency and power control capabilities.
FS50VSJ-03-VB is a high-performance single N-channel power MOSFET packaged in a TO263 package using Trench technology. This MOSFET is designed to provide superior switching performance and low on-resistance, making it suitable for high-efficiency power management applications. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A, the FS50VSJ-03-VB exhibits an on-resistance of 18mΩ and 12mΩ at different gate voltages (4.5V and 10V), respectively, ensuring efficient power transmission in a variety of applications. Its low threshold voltage (Vth) of 1.7V further optimizes switching efficiency and power control capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of FS50VSJ-03-VB model
1. **Package type**: TO263
- Suitable for applications with efficient heat dissipation and medium power.
2. **Configuration**: Single N-channel
- Suitable for most switching and amplification applications.
3. **Drain-source voltage (VDS)**: 30V
- Suitable for medium and low voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- Provides a wide operating voltage range.
5. **Threshold voltage (Vth)**: 1.7V
- Low threshold voltage ensures that the MOSFET can be turned on quickly at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- **18mΩ@VGS=4.5V**: Low on-resistance for high-performance applications at low gate drive voltages.
- **12mΩ@VGS=10V**: Further reduces on-resistance and improves performance at higher gate drive voltages.
7. **Maximum continuous drain current (ID)**: 50A
- Supports high current loads for applications with high power requirements.
8. **Technology**: Trench
- Trench technology improves the switching speed and conductivity of the MOSFET.
1. **Package type**: TO263
- Suitable for applications with efficient heat dissipation and medium power.
2. **Configuration**: Single N-channel
- Suitable for most switching and amplification applications.
3. **Drain-source voltage (VDS)**: 30V
- Suitable for medium and low voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- Provides a wide operating voltage range.
5. **Threshold voltage (Vth)**: 1.7V
- Low threshold voltage ensures that the MOSFET can be turned on quickly at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- **18mΩ@VGS=4.5V**: Low on-resistance for high-performance applications at low gate drive voltages.
- **12mΩ@VGS=10V**: Further reduces on-resistance and improves performance at higher gate drive voltages.
7. **Maximum continuous drain current (ID)**: 50A
- Supports high current loads for applications with high power requirements.
8. **Technology**: Trench
- Trench technology improves the switching speed and conductivity of the MOSFET.
Domain and module applications：
III. Application fields and modules of FS50VSJ-03-VB
FS50VSJ-03-VB excels in the following fields and modules:
1. **Computer power management**:
- In computer power supplies and battery charging modules, the low on-resistance and high current capability of FS50VSJ-03-VB help improve energy efficiency and extend equipment life.
2. **DC-DC converter**:
- Suitable for various DC-DC converters, such as power conversion applications in industrial and consumer electronics. Its high efficiency and low on-resistance can optimize the power conversion process and reduce energy loss.
3. **Power tools**:
- In the motor control circuit of power tools, FS50VSJ-03-VB can provide stable current supply and efficient switching performance, improving the overall performance and reliability of the tool.
4. **Automotive Electronic Systems**:
- This MOSFET is suitable for power regulation and drive circuits in automotive electronic systems, such as LED lamp control and battery management systems, providing low power consumption and efficient current control.
5. **LED Driver**:
- In LED driver modules, FS50VSJ-03-VB can be used for efficient current control to ensure stable brightness and long life of LED lamps.
These application areas demonstrate the wide applicability of FS50VSJ-03-VB in high-efficiency power management, switch control and high current loads.
FS50VSJ-03-VB excels in the following fields and modules:
1. **Computer power management**:
- In computer power supplies and battery charging modules, the low on-resistance and high current capability of FS50VSJ-03-VB help improve energy efficiency and extend equipment life.
2. **DC-DC converter**:
- Suitable for various DC-DC converters, such as power conversion applications in industrial and consumer electronics. Its high efficiency and low on-resistance can optimize the power conversion process and reduce energy loss.
3. **Power tools**:
- In the motor control circuit of power tools, FS50VSJ-03-VB can provide stable current supply and efficient switching performance, improving the overall performance and reliability of the tool.
4. **Automotive Electronic Systems**:
- This MOSFET is suitable for power regulation and drive circuits in automotive electronic systems, such as LED lamp control and battery management systems, providing low power consumption and efficient current control.
5. **LED Driver**:
- In LED driver modules, FS50VSJ-03-VB can be used for efficient current control to ensure stable brightness and long life of LED lamps.
These application areas demonstrate the wide applicability of FS50VSJ-03-VB in high-efficiency power management, switch control and high current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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